Si₃N₄ synthesis using a magnetized sheet plasma negative ion source

Authors

April M. Ulano National Institute of Physics, University of the Philippines Diliman
Giovanni Malapit National Institute of Physics, University of the Philippines Diliman and Department of Physical Sciences, University of the Philippines Baguio
Rommel Paulo B. Viloan National Institute of Physics, University of the Philippines Diliman
Michelle Villamayor National Institute of Physics, University of the Philippines Diliman
Roy B. Tumlos National Institute of Physics, University of the Philippines Diliman and Department of Physical Sciences and Mathematics, University of the Philippines Manila
Henry J. Ramos National Institute of Physics, University of the Philippines Diliman

Abstract

Polymorphic Si₃N₄ are synthesized using a magnetized sheet plasma negative ion source. XRD analysis showed that α- Si₃N₄ is present at ~43 degrees with a d-value of 2.069 and three prominent peaks of β-Si₃N₄ are also seen at ~50, 69 and 74 degrees with d-values of 1.793, 1.350, and 1.269 respectively, in all samples. Synthesis of Si3N4 was done by directly immersing silicon substrates in argon-nitogen plasma. In the study, substrate subjected to a longer discharge cleaning time produce more β-Si₃N₄.

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Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2009-7A-05

Section

Optics and Plasma Physics

Published

2009-10-28

How to Cite

[1]

AM Ulano, G Malapit, RPB Viloan, M Villamayor, RB Tumlos, and HJ Ramos, Si₃N₄ synthesis using a magnetized sheet plasma negative ion source, Proceedings of the Samahang Pisika ng Pilipinas 27, SPP-2009-7A-05 (2009). URL: https://proceedings.spp-online.org/article/view/SPP-2009-7A-05.