Si₃N₄ synthesis using a magnetized sheet plasma negative ion source
Abstract
Polymorphic Si3N4 are synthesized using a magnetized sheet plasma negative ion source. XRD analysis showed that α- Si3N4 is present at ~43 degrees with a d-value of 2.069 and three prominent peaks of β-Si3N4 are also seen at ~50, 69 and 74 degrees with d-values of 1.793, 1.350, and 1.269 respectively, in all samples. Synthesis of Si3N4 was done by directly immersing silicon substrates in argon-nitogen plasma. In the study, substrate subjected to a longer discharge cleaning time produce more β-Si3N4.