Synthesis of aluminum nitride via reactive RF-magnetron sputtering using low RF-power at deposition

Authors

  • Oliver D. Semblante National Institute of Physics, University of the Philippines Diliman
  • Claude R. Ceniza National Institute of Physics, University of the Philippines Diliman
  • Christine Joy U. Querebillo Department of Chemistry, Ateneo de Manila University
  • Regine A. Loberternos National Institute of Physics, University of the Philippines Diliman
  • Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Aluminum Nitride (AlN) thin film has found several applications in radio frequency micro-electromechanical systems (RF-MEMS) and optoelectronicdevices. In this study, AlN was synthesized using reactive radio frequency (rf) magnetron sputtering at an rf-power of 70W without intentional substrate heating. Sputtering gas used was argon and nitrogen mixture having a partial pressure ratio of 1:3, respectively. Aluminum to nitrogen stoichiometry was close to 1:1 as observed using EDS. Via XRD, the synthesized AlN film was found to be amorphous. The grown films did not exhibit porosity as depicted in SEM micrographs. UV-VIS spectrometry of the film showed absorbance atabout 396 nm (3.13 eV), 290 nm (4.28 eV) and 230 nm (5.39 eV).

SPP 2009 Proceedings Cover

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Published

2009-10-28

Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Section

Condensed Matter Physics

License

By submitting their manuscript to the Samahang Pisika ng Pilipinas (SPP) for consideration, the Authors warrant that their work is original, does not infringe on existing copyrights, and is not under active consideration for publication elsewhere.
Upon acceptance of their manuscript, the Authors further agree to grant SPP the non-exclusive, worldwide, and royalty-free rights to record, edit, copy, reproduce, publish, distribute, and use all or part of the manuscript for any purpose, in any media now existing or developed in the future, either individually or as part of a collection.
All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.

How to Cite

[1]
“Synthesis of aluminum nitride via reactive RF-magnetron sputtering using low RF-power at deposition”, Proc. SPP, vol. 27, no. 1, pp. SPP–2009, Oct. 2009, Accessed: Mar. 31, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2009-6B-05