Synthesis of aluminum nitride via reactive RF-magnetron sputtering using low RF-power at deposition

Authors

Oliver D. Semblante ⋅ PH National Institute of Physics, University of the Philippines Diliman
Claude R. Ceniza ⋅ PH National Institute of Physics, University of the Philippines Diliman
Christine Joy U. Querebillo ⋅ PH Department of Chemistry, Ateneo de Manila University
Regine A. Loberternos ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Aluminum Nitride (AlN) thin film has found several applications in radio frequency micro-electromechanical systems (RF-MEMS) and optoelectronicdevices. In this study, AlN was synthesized using reactive radio frequency (rf) magnetron sputtering at an rf-power of 70W without intentional substrate heating. Sputtering gas used was argon and nitrogen mixture having a partial pressure ratio of 1:3, respectively. Aluminum to nitrogen stoichiometry was close to 1:1 as observed using EDS. Via XRD, the synthesized AlN film was found to be amorphous. The grown films did not exhibit porosity as depicted in SEM micrographs. UV-VIS spectrometry of the film showed absorbance atabout 396 nm (3.13 eV), 290 nm (4.28 eV) and 230 nm (5.39 eV).

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Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2009-6B-05

Section

Condensed Matter Physics

Published

2009-10-28

How to Cite

[1]

OD Semblante, CR Ceniza, CJU Querebillo, RA Loberternos, AS Somintac, and AA Salvador, Synthesis of aluminum nitride via reactive RF-magnetron sputtering using low RF-power at deposition, Proceedings of the Samahang Pisika ng Pilipinas 27, SPP-2009-6B-05 (2009). URL: https://proceedings.spp-online.org/article/view/SPP-2009-6B-05.