Synthesis of aluminum nitride via reactive RF-magnetron sputtering using low RF-power at deposition

Authors

Oliver D. Semblante National Institute of Physics, University of the Philippines Diliman
Claude R. Ceniza National Institute of Physics, University of the Philippines Diliman
Christine Joy U. Querebillo Department of Chemistry, Ateneo de Manila University
Regine A. Loberternos National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Aluminum Nitride (AlN) thin film has found several applications in radio frequency micro-electromechanical systems (RF-MEMS) and optoelectronicdevices. In this study, AlN was synthesized using reactive radio frequency (rf) magnetron sputtering at an rf-power of 70W without intentional substrate heating. Sputtering gas used was argon and nitrogen mixture having a partial pressure ratio of 1:3, respectively. Aluminum to nitrogen stoichiometry was close to 1:1 as observed using EDS. Via XRD, the synthesized AlN film was found to be amorphous. The grown films did not exhibit porosity as depicted in SEM micrographs. UV-VIS spectrometry of the film showed absorbance atabout 396 nm (3.13 eV), 290 nm (4.28 eV) and 230 nm (5.39 eV).

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Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2009-6B-05

Section

Condensed Matter Physics

Published

2009-10-28

How to Cite

[1]

OD Semblante, CR Ceniza, CJU Querebillo, RA Loberternos, AS Somintac, and AA Salvador, Synthesis of aluminum nitride via reactive RF-magnetron sputtering using low RF-power at deposition, Proceedings of the Samahang Pisika ng Pilipinas 27, SPP-2009-6B-05 (2009). URL: https://proceedings.spp-online.org/article/view/SPP-2009-6B-05.