Zinc oxide film grown using successive chemical solution deposition (SCSD) technique

Authors

Natalie Czarina T. Cantre Materials Science and Engineering Program, University of the Philippines Diliman
Alexandra B. Santos Materials Science and Engineering Program, University of the Philippines Diliman
Roland V. Sarmago National Institute of Physics, University of the Philippines Diliman

Abstract

Zinc oxide (ZnO) films were grown on glass substrates by successive chemical solution dipping (SCSD) technique using Sodium zincate solution and hot water bath. Raman Spectroscopy, Energy-Dispersive X-Ray Spectroscopy and X-Ray Diffraction results confirmed the chemical identity of the films as ZnO. The (2 0 1) maximum peak and two (2) other low peaks at (2 0 0) and (0 0 2) can be associated with wurtzite ZnO structure. EDX results showed the presence of both elements Zinc and Oxygen. Varying the dipping time (2s, 4s ,6s) and number of dipping (100x, 150x) produced a mixture of globular and fibrous microstructure of ZnO as observed using scanning electron microscopy. Increasing the dipping time to 6s at 150x number of dipping favored the formation of purely rod-like structure of ZnO.

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Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2009-5B-01

Section

Condensed Matter Physics

Published

2009-10-28

How to Cite

[1]

NCT Cantre, AB Santos, and RV Sarmago, Zinc oxide film grown using successive chemical solution deposition (SCSD) technique, Proceedings of the Samahang Pisika ng Pilipinas 27, SPP-2009-5B-01 (2009). URL: https://proceedings.spp-online.org/article/view/SPP-2009-5B-01.