Intense terahertz emission from surface-illuminated GaAs grown on Si(100) and Si(111) substrates

Authors

  • Elmer Estacio Institute of Laser Engineering, Osaka University
  • Satoru Takatori Institute of Laser Engineering, Osaka University
  • Minh Hong Pham Institute of Laser Engineering, Osaka University
  • Marilou Cadatal-Raduban Institute of Laser Engineering, Osaka University
  • Jacque Lynn Gabayno Institute of Laser Engineering, Osaka University
  • Nobuhiko Sarukura Institute of Laser Engineering, Osaka University
  • John Vincent Misa National Institute of Physics, University of the Philippines Diliman
  • Rafael Jaculbia National Institute of Physics, University of the Philippines Diliman
  • Michael Defensor National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

We present results on the generation of terahertz radiation from femtosecond laser-irradiated GaAs layers grown on Si(100) and Si(111) substrates. Results show that the terahertz emission is an order of magnitude stronger than that of a bulk GaAs wafer. GaAs layers grown on Si(100) appear to have stronger emission compared with their Si(111) counterpart although the disparity is not very significant. This enhancement to the GaAs-related emission is presently ascribed to the strain field at the GaAs/Si interface. These results show proof of concept on the feasibility of terahertz optoelectronics being integrated into the existing semiconductor technology.

SPP 2009 Proceedings Cover

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Published

2009-10-28

Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Section

Optical Devices

License

By submitting their manuscript to the Samahang Pisika ng Pilipinas (SPP) for consideration, the Authors warrant that their work is original, does not infringe on existing copyrights, and is not under active consideration for publication elsewhere.
Upon acceptance of their manuscript, the Authors further agree to grant SPP the non-exclusive, worldwide, and royalty-free rights to record, edit, copy, reproduce, publish, distribute, and use all or part of the manuscript for any purpose, in any media now existing or developed in the future, either individually or as part of a collection.
All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.

How to Cite

[1]
“Intense terahertz emission from surface-illuminated GaAs grown on Si(100) and Si(111) substrates”, Proc. SPP, vol. 27, no. 1, pp. SPP–2009, Oct. 2009, Accessed: Mar. 30, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2009-3B-04