Intense terahertz emission from surface-illuminated GaAs grown on Si(100) and Si(111) substrates

Authors

Elmer Estacio ⋅ JP Institute of Laser Engineering, Osaka University
Satoru Takatori ⋅ JP Institute of Laser Engineering, Osaka University
Minh Hong Pham ⋅ JP Institute of Laser Engineering, Osaka University
Marilou Cadatal-Raduban ⋅ JP Institute of Laser Engineering, Osaka University
Jacque Lynn Gabayno ⋅ JP Institute of Laser Engineering, Osaka University
Nobuhiko Sarukura ⋅ JP Institute of Laser Engineering, Osaka University
John Vincent Misa ⋅ PH National Institute of Physics, University of the Philippines Diliman
Rafael Jaculbia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Michael Defensor ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

We present results on the generation of terahertz radiation from femtosecond laser-irradiated GaAs layers grown on Si(100) and Si(111) substrates. Results show that the terahertz emission is an order of magnitude stronger than that of a bulk GaAs wafer. GaAs layers grown on Si(100) appear to have stronger emission compared with their Si(111) counterpart although the disparity is not very significant. This enhancement to the GaAs-related emission is presently ascribed to the strain field at the GaAs/Si interface. These results show proof of concept on the feasibility of terahertz optoelectronics being integrated into the existing semiconductor technology.

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Published

2009-10-28

Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Section

Optical Devices

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How to Cite

[1]

“Intense terahertz emission from surface-illuminated GaAs grown on Si(100) and Si(111) substrates”, Proc. SPP, vol. 27, no. 1, pp. SPP–2009, Oct. 2009, Accessed: Apr. 30, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2009-3B-04