Fabrication and electrical characterization of a p-i-n GaAs-based photovoltaic cell

Authors

  • Fritz Christian Awitan National Institute of Physics, University of the Philippines Diliman
  • Ronel Christian Roca National Institute of Physics, University of the Philippines Diliman
  • Maria Emma Villamin National Institute of Physics, University of the Philippines Diliman
  • Rafael Jaculbia National Institute of Physics, University of the Philippines Diliman
  • Neil Irvin Cabello National Institute of Physics, University of the Philippines Diliman
  • Shiela Crosby National Institute of Physics, University of the Philippines Diliman
  • Karim Omambac National Institute of Physics, University of the Philippines Diliman
  • Jennifer Anne Constantino National Institute of Physics, University of the Philippines Diliman
  • Michael Defensor National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

A gallium arsenide (GaAs)-based photovoltaic cell was fabricated from molecular beam epitaxy (MBE)-grown p-i-n layer using standard UV-photolithography and resistive evaporation metal deposition technique. The open circuit voltage of the cell was Voc= 0.5V and the short circuit current Isc = -0.042mA. In addition, the fill factor (FF) and the maximum power (Pmax) of a single solar cell with area equal to 650x650um2 were computed to be FF = 0.32 and Pmax= 7mW. The power per unit area was 1660 mW/cm2 under Ar laser illumination.

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Article ID

SPP-2009-3B-03

Section

Optical Devices

Published

2009-10-28

How to Cite

[1]
FC Awitan, RC Roca, ME Villamin, R Jaculbia, NI Cabello, S Crosby, K Omambac, JA Constantino, M Defensor, A Somintac, and A Salvador, Fabrication and electrical characterization of a p-i-n GaAs-based photovoltaic cell, Proceedings of the Samahang Pisika ng Pilipinas 27, SPP-2009-3B-03 (2009). URL: https://proceedings.spp-online.org/article/view/SPP-2009-3B-03.