Fabrication and electrical characterization of a p-i-n GaAs-based photovoltaic cell
Abstract
A gallium arsenide (GaAs)-based photovoltaic cell was fabricated from molecular beam epitaxy (MBE)-grown p-i-n layer using standard UV-photolithography and resistive evaporation metal deposition technique. The open circuit voltage of the cell was Voc= 0.5V and the short circuit current Isc = -0.042mA. In addition, the fill factor (FF) and the maximum power (Pmax) of a single solar cell with area equal to 650x650um2 were computed to be FF = 0.32 and Pmax= 7mW. The power per unit area was 1660 mW/cm2 under Ar laser illumination.