Fabrication of Si nanopillar by reactive ion etching using a gas discharge ion source

Authors

Adonis Flores National Institute of Physics, University of the Philippines Diliman and Department of Physics, University of San Carlos
Giovanni Malapit National Institute of Physics, University of the Philippines Diliman and Department of Physical Sciences, University of the Philippines Baguio
Edmund Casulla National Institute of Physics, University of the Philippines Diliman
Paul Conception National Institute of Physics, University of the Philippines Diliman
Gene Blantocas National Institute of Physics, University of the Philippines Diliman
Henry Ramos National Institute of Physics, University of the Philippines Diliman

Abstract

We report a straightforward technique for the fabrication of Si nanopillar. CF₄ plasma produced from a low power DC gas discharge ion source was utilized to etch the silicon substrate. It was hypothesized that Cr atoms from the stainless steel exit aperture of the ion source were sputtered and deposited on the Si substrate serving as nanomask for the reactive ion etching. Other than sample cleaning, no additional pre and post treatments were done on the silicon sample. Moreover, no external heating was introduced on the substrate. The GDIS offers an alternative process of creating Si nanopillars with diameter < 100 nm and comparably high aspect ratio (~ 6-8).

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Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2009-3A-03

Section

Photonics and Spectroscopy

Published

2009-10-28

How to Cite

[1]

A Flores, G Malapit, E Casulla, P Conception, G Blantocas, and H Ramos, Fabrication of Si nanopillar by reactive ion etching using a gas discharge ion source, Proceedings of the Samahang Pisika ng Pilipinas 27, SPP-2009-3A-03 (2009). URL: https://proceedings.spp-online.org/article/view/SPP-2009-3A-03.