Deep-level transient spectroscopy measurement on GaAs-based p-i-n photovoltaic cell

Authors

Hazel Molleda ⋅ PH National Institute of Physics, University of the Philippines Diliman
Ma. Herminia Balgos ⋅ PH National Institute of Physics, University of the Philippines Diliman
Mae Agatha Tumanguil ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elizabeth Ann Prieto ⋅ PH National Institute of Physics, University of the Philippines Diliman
Ma. Emma Villamin ⋅ PH National Institute of Physics, University of the Philippines Diliman
Fritz Christian Awitan ⋅ PH National Institute of Physics, University of the Philippines Diliman
Michelle Bailon-Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Electrical characteristics and defects of GaAs p-i-n layers with InAs quantum dots for photovoltaic cell application have been investigated using deep level transient spectroscopy (DLTS) method in Schottky diode configuration. We have successfully identified M3 deep-level trap in p-i-n (quantum dot) photovoltaic cell device. This electrically active trap is an arsenic-related defect commonly found in MBE-grown GaAs layers grown under As-stabilized system. This defect may also be intrinsic to p-i-n layers with quantum dots since QDs can be considered as traps for charge carriers. However, such traps may cause inefficiency to a photovoltaic cell.

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Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2009-2B-03

Section

Optical Devices

Published

2009-10-28

How to Cite

[1]

H Molleda, MH Balgos, MA Tumanguil, EA Prieto, ME Villamin, FC Awitan, M Bailon-Somintac, AS Somintac, and AA Salvador, Deep-level transient spectroscopy measurement on GaAs-based p-i-n photovoltaic cell, Proceedings of the Samahang Pisika ng Pilipinas 27, SPP-2009-2B-03 (2009). URL: https://proceedings.spp-online.org/article/view/SPP-2009-2B-03.