Deep-level transient spectroscopy measurement on GaAs-based p-i-n photovoltaic cell

Authors

Hazel Molleda National Institute of Physics, University of the Philippines Diliman
Ma. Herminia Balgos National Institute of Physics, University of the Philippines Diliman
Mae Agatha Tumanguil National Institute of Physics, University of the Philippines Diliman
Elizabeth Ann Prieto National Institute of Physics, University of the Philippines Diliman
Ma. Emma Villamin National Institute of Physics, University of the Philippines Diliman
Fritz Christian Awitan National Institute of Physics, University of the Philippines Diliman
Michelle Bailon-Somintac National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Electrical characteristics and defects of GaAs p-i-n layers with InAs quantum dots for photovoltaic cell application have been investigated using deep level transient spectroscopy (DLTS) method in Schottky diode configuration. We have successfully identified M3 deep-level trap in p-i-n (quantum dot) photovoltaic cell device. This electrically active trap is an arsenic-related defect commonly found in MBE-grown GaAs layers grown under As-stabilized system. This defect may also be intrinsic to p-i-n layers with quantum dots since QDs can be considered as traps for charge carriers. However, such traps may cause inefficiency to a photovoltaic cell.

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Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2009-2B-03

Section

Optical Devices

Published

2009-10-28

How to Cite

[1]

H Molleda, MH Balgos, MA Tumanguil, EA Prieto, ME Villamin, FC Awitan, M Bailon-Somintac, AS Somintac, and AA Salvador, Deep-level transient spectroscopy measurement on GaAs-based p-i-n photovoltaic cell, Proceedings of the Samahang Pisika ng Pilipinas 27, SPP-2009-2B-03 (2009). URL: https://proceedings.spp-online.org/article/view/SPP-2009-2B-03.