Increase of generated tetrahertz wave from an In-As thin film by means of an optical coupler

Authors

Christopher T. Que ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui
Tadataka Edamura ⋅ JP Central Research Laboratory, Hamamatsu Photonics, Japan
Makoto Nakajima ⋅ JP Institute for Solid State Physics, The University of Tokyo
Masahiko Tani ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui
Masanori Hangyo ⋅ JP Institute of Laser Engineering, Osaka University

Abstract

Increase of the generated pulsed terahertz wave from an InAs thin film excited by a femtosecond laser is reported. The InAs film thickness is 520 nm and is fabricated on a Si substrate. A Si hemispherical lens coupler is attached on the substrate side of the InAs THz emitter. A factor of 7.5 times increase in the amplitude of the THz wave from the InAs film with the lens coupler as compared to that of bare InAs has been observed. Further collimation of the radiated THz wave propagating through the lens coupler to air is thought to be the reason for the increase.

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Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2009-2B-02

Section

Optical Devices

Published

2009-10-28

How to Cite

[1]

CT Que, T Edamura, M Nakajima, M Tani, and M Hangyo, Increase of generated tetrahertz wave from an In-As thin film by means of an optical coupler, Proceedings of the Samahang Pisika ng Pilipinas 27, SPP-2009-2B-02 (2009). URL: https://proceedings.spp-online.org/article/view/SPP-2009-2B-02.