Growth and characterization of catalyst-free gallium arsenide nanorods on silicon substrates via molecular beam epitaxy

Authors

  • John V. Misa ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Ma. Herminia M. Balgos ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Rafael B. Jaculbia ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Jeremy G. Porquez ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Michael J. Defensor ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Gallium arsenide nanorods were grown on [111] and [100] oriented silicon substrates via catalyst free growth using molecular beam epitaxy. Scanning electron microscopy reveals that the nanorods lengths range from 1-30 microns with diameter ranging from 60-200nm at densities of 6.2 nr/um². Raman scattering spectroscopy reveals broadening and down shifting of the LO phonon peaks indicative of nanorod formation. Photoluminescence spectra show a slight blue shift in the peaks of the samples corresponding to weak quantum confinement.

SPP 2009 Proceedings Cover

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Published

2009-10-28

Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Section

Nanomaterials

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How to Cite

[1]
“Growth and characterization of catalyst-free gallium arsenide nanorods on silicon substrates via molecular beam epitaxy”, Proc. SPP, vol. 27, no. 1, pp. SPP–2009, Oct. 2009, Accessed: Apr. 30, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2009-1B-03