Growth and characterization of catalyst-free gallium arsenide nanorods on silicon substrates via molecular beam epitaxy

Authors

John V. Misa National Institute of Physics, University of the Philippines Diliman
Ma. Herminia M. Balgos National Institute of Physics, University of the Philippines Diliman
Rafael B. Jaculbia National Institute of Physics, University of the Philippines Diliman
Jeremy G. Porquez National Institute of Physics, University of the Philippines Diliman
Michael J. Defensor National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Gallium arsenide nanorods were grown on [111] and [100] oriented silicon substrates via catalyst free growth using molecular beam epitaxy. Scanning electron microscopy reveals that the nanorods lengths range from 1-30 microns with diameter ranging from 60-200nm at densities of 6.2 nr/um². Raman scattering spectroscopy reveals broadening and down shifting of the LO phonon peaks indicative of nanorod formation. Photoluminescence spectra show a slight blue shift in the peaks of the samples corresponding to weak quantum confinement.

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Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2009-1B-03

Section

Nanomaterials

Published

2009-10-28

How to Cite

[1]

JV Misa, MHM Balgos, RB Jaculbia, JG Porquez, MJ Defensor, AS Somintac, and AA Salvador, Growth and characterization of catalyst-free gallium arsenide nanorods on silicon substrates via molecular beam epitaxy, Proceedings of the Samahang Pisika ng Pilipinas 27, SPP-2009-1B-03 (2009). URL: https://proceedings.spp-online.org/article/view/SPP-2009-1B-03.