Growth and characterization of catalyst-free gallium arsenide nanorods on silicon substrates via molecular beam epitaxy

Authors

John V. Misa ⋅ PH National Institute of Physics, University of the Philippines Diliman
Ma. Herminia M. Balgos ⋅ PH National Institute of Physics, University of the Philippines Diliman
Rafael B. Jaculbia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jeremy G. Porquez ⋅ PH National Institute of Physics, University of the Philippines Diliman
Michael J. Defensor ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Gallium arsenide nanorods were grown on [111] and [100] oriented silicon substrates via catalyst free growth using molecular beam epitaxy. Scanning electron microscopy reveals that the nanorods lengths range from 1-30 microns with diameter ranging from 60-200nm at densities of 6.2 nr/um². Raman scattering spectroscopy reveals broadening and down shifting of the LO phonon peaks indicative of nanorod formation. Photoluminescence spectra show a slight blue shift in the peaks of the samples corresponding to weak quantum confinement.

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Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Scouting the grand vista: From curiosity-driven research to real world application

28-30 October 2009, Development Academy of the Philippines Convention Center, Tagaytay City

Article ID

SPP-2009-1B-03

Section

Nanomaterials

Published

2009-10-28

How to Cite

[1]

JV Misa, MHM Balgos, RB Jaculbia, JG Porquez, MJ Defensor, AS Somintac, and AA Salvador, Growth and characterization of catalyst-free gallium arsenide nanorods on silicon substrates via molecular beam epitaxy, Proceedings of the Samahang Pisika ng Pilipinas 27, SPP-2009-1B-03 (2009). URL: https://proceedings.spp-online.org/article/view/SPP-2009-1B-03.