Rate-dependent hysteresis in p-n junctions of bipolar junction transistors

Authors

Earl Angelo Panganiban National Institute of Physics, University of the Philippines Diliman
Carmencita Lumban National Institute of Physics, University of the Philippines Diliman
Kashogi Walter Astapan National Institute of Physics, University of the Philippines Diliman
Vernon Julius Cemine National Institute of Physics, University of the Philippines Diliman

Abstract

We investigate the current-voltage (I-V) curves of the p-n junctions in 2N3904 npn and 2N3906 pnp bipolar junction transistors as the frequency of a triangular input voltage is increased. Frequency dependent hysteresis on I-V curves was observed. The p-n junction capacitance was also measured by obtaining the charging and discharging plots at increasing frequency. We found that the driving frequency can enhance the hysteresis of the diode, and the capacitance of the p-n junction exhibited direct dependence on the applied bias voltage.

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Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2008-PB-34

Section

Poster Session B (Instrumentation, Environmental, and Theoretical Physics)

Published

2008-10-22

How to Cite

[1]

EA Panganiban, C Lumban, KW Astapan, and VJ Cemine, Rate-dependent hysteresis in p-n junctions of bipolar junction transistors, Proceedings of the Samahang Pisika ng Pilipinas 26, SPP-2008-PB-34 (2008). URL: https://proceedings.spp-online.org/article/view/SPP-2008-PB-34.