Improved GaAs/AlGaAs heterostructure grown on (100) GaSb substrate via molecular beam epitaxy

Authors

Cyril P. Sadia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Mae Agatha C. Tumanguil ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jamaica Palay ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elizabeth Ann P. Prieto ⋅ PH National Institute of Physics, University of the Philippines Diliman
Rafael B. Jaculbia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

The effect of unstrained AlAs/GaAs superlattice buffer and growth temperature on GaAs/AlGaAs heterostructure grown on GaSb substrate was investigated. The quality of the layers was assessed using high resolution x ray diffraction and low temperature photoluminescence. Sharper full width at half maximum (0.2925°) was obtained for the GaAs film grown at 680°C than the film grown at 570°C. Photoluminescence was also exhibited by the GaAs film grown at 680°C. The GaAs/AlGaAs grown at 680°C and with superlattice buffer demonstrated a narrow x-ray diffraction peak-width (0.26°) and a photoluminescence spectrum.

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Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2008-PA-25

Section

Poster Session A (Materials, Optical, and Plasma Physics)

Published

2008-10-22

How to Cite

[1]

CP Sadia, MAC Tumanguil, J Palay, EAP Prieto, RB Jaculbia, AS Somintac, and AA Salvador, Improved GaAs/AlGaAs heterostructure grown on (100) GaSb substrate via molecular beam epitaxy, Proceedings of the Samahang Pisika ng Pilipinas 26, SPP-2008-PA-25 (2008). URL: https://proceedings.spp-online.org/article/view/SPP-2008-PA-25.