Improved GaAs/AlGaAs heterostructure grown on (100) GaSb substrate via molecular beam epitaxy

Authors

Cyril P. Sadia National Institute of Physics, University of the Philippines Diliman
Mae Agatha C. Tumanguil National Institute of Physics, University of the Philippines Diliman
Jamaica Palay National Institute of Physics, University of the Philippines Diliman
Elizabeth Ann P. Prieto National Institute of Physics, University of the Philippines Diliman
Rafael B. Jaculbia National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

The effect of unstrained AlAs/GaAs superlattice buffer and growth temperature on GaAs/AlGaAs heterostructure grown on GaSb substrate was investigated. The quality of the layers was assessed using high resolution x ray diffraction and low temperature photoluminescence. Sharper full width at half maximum (0.2925°) was obtained for the GaAs film grown at 680°C than the film grown at 570°C. Photoluminescence was also exhibited by the GaAs film grown at 680°C. The GaAs/AlGaAs grown at 680°C and with superlattice buffer demonstrated a narrow x-ray diffraction peak-width (0.26°) and a photoluminescence spectrum.

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Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2008-PA-25

Section

Poster Session A (Materials, Optical, and Plasma Physics)

Published

2008-10-22

How to Cite

[1]

CP Sadia, MAC Tumanguil, J Palay, EAP Prieto, RB Jaculbia, AS Somintac, and AA Salvador, Improved GaAs/AlGaAs heterostructure grown on (100) GaSb substrate via molecular beam epitaxy, Proceedings of the Samahang Pisika ng Pilipinas 26, SPP-2008-PA-25 (2008). URL: https://proceedings.spp-online.org/article/view/SPP-2008-PA-25.