Improved GaAs/AlGaAs heterostructure grown on (100) GaSb substrate via molecular beam epitaxy

Authors

Cyril P. Sadia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Mae Agatha C. Tumanguil ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jamaica Palay ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elizabeth Ann P. Prieto ⋅ PH National Institute of Physics, University of the Philippines Diliman
Rafael B. Jaculbia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

The effect of unstrained AlAs/GaAs superlattice buffer and growth temperature on GaAs/AlGaAs heterostructure grown on GaSb substrate was investigated. The quality of the layers was assessed using high resolution x ray diffraction and low temperature photoluminescence. Sharper full width at half maximum (0.2925Â°) was obtained for the GaAs film grown at 680Â°C than the film grown at 570Â°C. Photoluminescence was also exhibited by the GaAs film grown at 680Â°C. The GaAs/AlGaAs grown at 680Â°C and with superlattice buffer demonstrated a narrow x-ray diffraction peak-width (0.26Â°) and a photoluminescence spectrum.

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Published

2008-10-22

Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Section

Poster Session A (Materials, Optical, and Plasma Physics)

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How to Cite

[1]

“Improved GaAs/AlGaAs heterostructure grown on (100) GaSb substrate via molecular beam epitaxy”, Proc. SPP, vol. 26, no. 1, p. SPP-2008-PA-25, Oct. 2008, Accessed: Apr. 08, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2008-PA-25