Growth and characterization of strained InxGa1-xAs/GaAs superlattice on GaAs(001) substrate

Authors

  • Joel G. Fernando National Institute of Physics, University of the Philippines Diliman and College of Science and Mathematics, Western Mindanao State University
  • Rafael B. Jaculbia National Institute of Physics, University of the Philippines Diliman
  • Jasher A. Ibañes National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman
  • Armando S. Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

InxGa1-xAs/GaAs superlattice structures were successfully grown on GaAs(001) substrate via Molecular Beam Epitaxy. The period thicknesses of the superlattices (196 Ã…, 211 Ã…, and 174 Ã… for samples A, B and C, respectively) and Indium mole fractions of InGaAs layers (0.155, 0.166, and 0.195 for samples A, B and C, respectively) were computed using XRD analysis. The period thickness and mole fraction of sample C were found to deviate from their expected values. This discrepancy was attributed to the generation of misfit dislocation at the heterointerface of the superlattice, which led to the strain relaxation in InGaAs layers. This was confirmed by room-temperature photoluminescence measurements of the superlattice.

SPP 2008 Proceedings Cover

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Published

2008-10-22

Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Section

Poster Session A (Materials, Optical, and Plasma Physics)

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How to Cite

[1]
“Growth and characterization of strained InxGa1-xAs/GaAs superlattice on GaAs(001) substrate”, Proc. SPP, vol. 26, no. 1, p. SPP-2008-PA-24, Oct. 2008, Accessed: Mar. 27, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2008-PA-24