X-ray diffraction analysis of Au-assisted GaAs nanowires grown on Si substrates via molecular beam epitaxy

Authors

Joel G. Fernando ⋅ PH National Institute of Physics, University of the Philippines Diliman and College of Science and Mathematics, Western Mindanao State University
Ramon M. delos Santos ⋅ PH National Institute of Physics, University of the Philippines Diliman
Mae C. Tumanguil ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jasher A. Ibañes ⋅ PH National Institute of Physics, University of the Philippines Diliman
Michelle B. Somintac ⋅ PH Intel Technology Philippines Inc., Gateway Business Park, Cavite
Paul Concepcion ⋅ PH Intel Technology Philippines Inc., Gateway Business Park, Cavite
J. T. de Guzman ⋅ PH Department of Physical Sciences, University of the Philippines Baguio
R. M. Durante ⋅ PH Department of Physical Sciences, University of the Philippines Baguio
J. M. Guhit ⋅ PH Department of Physical Sciences, University of the Philippines Baguio
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Crystalline quality and structural properties of molecular beam epitaxy (MBE)-grown gallium arsenide (GaAs) nanowires on silicon (100) and (111) substrates were investigated using x-ray diffraction (XRD) measurements. Three sets of gold (Au) nanoparticles with different average sizes and densities were used as metal-catalysts that predefine the growth areas for the nanowires on both substrates and direct growth in a highly anisotropic or 1-D manner. The presence of a GaAs peak corresponding to (004) crystal plane suggests that the synthesized nanowires on both substrates have cubic zincblende structure with lattice parameter a = 5.64 Å.

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Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2008-PA-23

Section

Poster Session A (Materials, Optical, and Plasma Physics)

Published

2008-10-22

How to Cite

[1]

JG Fernando, RM delos Santos, MC Tumanguil, JA Ibañes, MB Somintac, P Concepcion, JT de Guzman, RM Durante, JM Guhit, AA Salvador, and AS Somintac, X-ray diffraction analysis of Au-assisted GaAs nanowires grown on Si substrates via molecular beam epitaxy, Proceedings of the Samahang Pisika ng Pilipinas 26, SPP-2008-PA-23 (2008). URL: https://proceedings.spp-online.org/article/view/SPP-2008-PA-23.