X-ray diffraction analysis of Au-assisted GaAs nanowires grown on Si substrates via molecular beam epitaxy

Authors

Joel G. Fernando ⋅ PH National Institute of Physics, University of the Philippines Diliman and College of Science and Mathematics, Western Mindanao State University
Ramon M. delos Santos ⋅ PH National Institute of Physics, University of the Philippines Diliman
Mae C. Tumanguil ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jasher A. Ibañes ⋅ PH National Institute of Physics, University of the Philippines Diliman
Michelle B. Somintac ⋅ PH Intel Technology Philippines Inc., Gateway Business Park, Cavite
Paul Concepcion ⋅ PH Intel Technology Philippines Inc., Gateway Business Park, Cavite
J. T. de Guzman ⋅ PH Department of Physical Sciences, University of the Philippines Baguio
R. M. Durante ⋅ PH Department of Physical Sciences, University of the Philippines Baguio
J. M. Guhit ⋅ PH Department of Physical Sciences, University of the Philippines Baguio
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Crystalline quality and structural properties of molecular beam epitaxy (MBE)-grown gallium arsenide (GaAs) nanowires on silicon (100) and (111) substrates were investigated using x-ray diffraction (XRD) measurements. Three sets of gold (Au) nanoparticles with different average sizes and densities were used as metal-catalysts that predefine the growth areas for the nanowires on both substrates and direct growth in a highly anisotropic or 1-D manner. The presence of a GaAs peak corresponding to (004) crystal plane suggests that the synthesized nanowires on both substrates have cubic zincblende structure with lattice parameter a = 5.64 Ã….

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Published

2008-10-22

Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Section

Poster Session A (Materials, Optical, and Plasma Physics)

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How to Cite

[1]

“X-ray diffraction analysis of Au-assisted GaAs nanowires grown on Si substrates via molecular beam epitaxy”, Proc. SPP, vol. 26, no. 1, p. SPP-2008-PA-23, Oct. 2008, Accessed: Apr. 08, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2008-PA-23