Characterization of laser ablation sites on silicon

Authors

Don Jacob M. Barrientos ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jacque Lynn F. Gabayno ⋅ PH National Institute of Physics, University of the Philippines Diliman
Wilson O. Garcia ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Laser ablation of silicon with a Q-switched 1064nm Nd:YAG laser is studied and SEM images of the ablated sites were obtained. The ablation crater diameter and sidewall height were measured from these images. The ratio of the perimeter with area of the craters was calculated by implementing an image processing algorithm. The ratio obtained was compared to the laser spot size of a Gaussian beam and a minimum percentage error of 7.6% was incurred. An ablation threshold of ~3 J/cm² for silicon was experimentally measured which deviates from the ~9.32 J/cm² predicted by the classical thermal laser ablation model.

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Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2008-PA-21

Section

Poster Session A (Materials, Optical, and Plasma Physics)

Published

2008-10-22

How to Cite

[1]

DJM Barrientos, JLF Gabayno, and WO Garcia, Characterization of laser ablation sites on silicon, Proceedings of the Samahang Pisika ng Pilipinas 26, SPP-2008-PA-21 (2008). URL: https://proceedings.spp-online.org/article/view/SPP-2008-PA-21.