Investigation on the growth, design and scattering mechanisms of an Al_xGa_1-xAs/GaAs high electron mobility transistor exceeding 200,000 cm²/Vs

Authors

Elizabeth Ann P. Prieto National Institute of Physics, University of the Philippines Diliman
Jonathan D. Azares National Institute of Physics, University of the Philippines Diliman
Ma. Herminia M. Balgos National Institute of Physics, University of the Philippines Diliman
Rafael B. Jaculbia National Institute of Physics, University of the Philippines Diliman
Mae Agatha C. Tumanguil National Institute of Physics, University of the Philippines Diliman
Jasher John A. Ibañes National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Improving the mobility and ascertaining the quality of high electron mobility transistors have always been a major concern in the field of semiconductors. With the improved growth procedure in the Condensed Matter Physics Laboratory, effectiveness in layer deposition by molecular beam epitaxy (MBE) has been achieved. A HEMT of 200,000 cm²/Vs electron mobility at 10K was obtained, the highest electron mobility to date in the country since 2002. We found that interface roughness scattering limits the electron mobility at 10K-40K, while above 100K optical polar scattering was dominant. The high electron mobility of the grown HEMT and the reduced contribution of the different scattering mechanisms indicated the improved quality of the HEMT and the smoothness of deposition during growth.

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Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2008-PA-13

Section

Poster Session A (Materials, Optical, and Plasma Physics)

Published

2008-10-22

How to Cite

[1]

EAP Prieto, JD Azares, MHM Balgos, RB Jaculbia, MAC Tumanguil, JJA Ibañes, AS Somintac, and AA Salvador, Investigation on the growth, design and scattering mechanisms of an AlxGa1-xAs/GaAs high electron mobility transistor exceeding 200,000 cm2/Vs, Proceedings of the Samahang Pisika ng Pilipinas 26, SPP-2008-PA-13 (2008). URL: https://proceedings.spp-online.org/article/view/SPP-2008-PA-13.