Mobility enhancement of a high electron mobility transistor via external strain

Authors

Karim M. Omambac National Institute of Physics, University of the Philippines Diliman
Elizabeth Ann Prieto National Institute of Physics, University of the Philippines Diliman
Jonathan D. Azares National Institute of Physics, University of the Philippines Diliman
Rafael B. Jaculbia National Institute of Physics, University of the Philippines Diliman
Carlos F. Baldo National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

The effect of external strain in the growth of High-Electron Mobility Transistor was investigated. The layer was grown by Molecular Beam Epitaxy at elevated temperature (690°C). High resolution x-ray diffraction of the grown layer revealed that indium diffused into the Gallium Arsenide (GaAs) substrate. Hall measurements at 10K showed that there was an increase in the mobility due to strain. Reflectivity measurements at 10K of the As-grown layer showed the splitting of the heavy-hole (HH) – light-hole (LH) bands, indicating that the layer was strained. The separation was about 2.6meV at 10K and broadening of the PL peak in the 1.516eV was observed. The increase in mobility was attributed to change in the effective mass of the electron in the conduction band when the HH – LH bands were separated.

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Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2008-PA-09

Section

Poster Session A (Materials, Optical, and Plasma Physics)

Published

2008-10-22

How to Cite

[1]

KM Omambac, EA Prieto, JD Azares, RB Jaculbia, CF Baldo, and AA Salvador, Mobility enhancement of a high electron mobility transistor via external strain, Proceedings of the Samahang Pisika ng Pilipinas 26, SPP-2008-PA-09 (2008). URL: https://proceedings.spp-online.org/article/view/SPP-2008-PA-09.