Mobility enhancement of a high electron mobility transistor via external strain

Authors

  • Karim M. Omambac National Institute of Physics, University of the Philippines Diliman
  • Elizabeth Ann Prieto National Institute of Physics, University of the Philippines Diliman
  • Jonathan D. Azares National Institute of Physics, University of the Philippines Diliman
  • Rafael B. Jaculbia National Institute of Physics, University of the Philippines Diliman
  • Carlos F. Baldo National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

The effect of external strain in the growth of High-Electron Mobility Transistor was investigated. The layer was grown by Molecular Beam Epitaxy at elevated temperature (690°C). High resolution x-ray diffraction of the grown layer revealed that indium diffused into the Gallium Arsenide (GaAs) substrate. Hall measurements at 10K showed that there was an increase in the mobility due to strain. Reflectivity measurements at 10K of the As-grown layer showed the splitting of the heavy-hole (HH) – light-hole (LH) bands, indicating that the layer was strained. The separation was about 2.6meV at 10K and broadening of the PL peak in the 1.516eV was observed. The increase in mobility was attributed to change in the effective mass of the electron in the conduction band when the HH – LH bands were separated.

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Published

2008-10-22

Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Section

Poster Session A (Materials, Optical, and Plasma Physics)

License

By submitting their manuscript to the Samahang Pisika ng Pilipinas (SPP) for consideration, the Authors warrant that their work is original, does not infringe on existing copyrights, and is not under active consideration for publication elsewhere.
Upon acceptance of their manuscript, the Authors further agree to grant SPP the non-exclusive, worldwide, and royalty-free rights to record, edit, copy, reproduce, publish, distribute, and use all or part of the manuscript for any purpose, in any media now existing or developed in the future, either individually or as part of a collection.
All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.

How to Cite

[1]
“Mobility enhancement of a high electron mobility transistor via external strain”, Proc. SPP, vol. 26, no. 1, p. SPP-2008-PA-09, Oct. 2008, Accessed: Mar. 29, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2008-PA-09