Strain in epitaxially lifted off GaAs bonded on Gold probed via Raman spectroscopy

Authors

Michael J. Defensor ⋅ PH National Institute of Physics, University of the Philippines Diliman
Rafael B. Jaculbia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Raman spectroscopy was utilized to investigate spot heating induced strain in epitaxially lifted off GaAs bonded on Gold. Gold mesh patterns were deposited on top of the GaAs film via electroplating prior to separating the film from their host substrate through the epitaxial lift-off technique. Raman spectroscopy shows that the LO phonon peak of GaAs shifts to lower wavenumbers by as much as 4 cm^-1 for power density of 40,000 W/cm² . This suggests that the GaAs film experiences tensile strain caused by the large disparity in thermal expansion coefficient of GaAs and Gold. Results show a that a significantly larger amount of strain is introduced by laser heating of GaAs/Au films compared to heating at 500°C for GaAs grown on Silicon.

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Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2008-PA-06

Section

Poster Session A (Materials, Optical, and Plasma Physics)

Published

2008-10-22

How to Cite

[1]

MJ Defensor, RB Jaculbia, AS Somintac, and AA Salvador, Strain in epitaxially lifted off GaAs bonded on Gold probed via Raman spectroscopy, Proceedings of the Samahang Pisika ng Pilipinas 26, SPP-2008-PA-06 (2008). URL: https://proceedings.spp-online.org/article/view/SPP-2008-PA-06.