Strain in epitaxially lifted off GaAs bonded on Gold probed via Raman spectroscopy

Authors

  • Michael J. Defensor National Institute of Physics, University of the Philippines Diliman
  • Rafael B. Jaculbia National Institute of Physics, University of the Philippines Diliman
  • Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Raman spectroscopy was utilized to investigate spot heating induced strain in epitaxially lifted off GaAs bonded on Gold. Gold mesh patterns were deposited on top of the GaAs film via electroplating prior to separating the film from their host substrate through the epitaxial lift-off technique. Raman spectroscopy shows that the LO phonon peak of GaAs shifts to lower wavenumbers by as much as 4 cm-1 for power density of 40,000 W/cm2 . This suggests that the GaAs film experiences tensile strain caused by the large disparity in thermal expansion coefficient of GaAs and Gold. Results show a that a significantly larger amount of strain is introduced by laser heating of GaAs/Au films compared to heating at 500°C for GaAs grown on Silicon.

SPP 2008 Proceedings Cover

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Published

2008-10-22

Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Section

Poster Session A (Materials, Optical, and Plasma Physics)

License

By submitting their manuscript to the Samahang Pisika ng Pilipinas (SPP) for consideration, the Authors warrant that their work is original, does not infringe on existing copyrights, and is not under active consideration for publication elsewhere.
Upon acceptance of their manuscript, the Authors further agree to grant SPP the non-exclusive, worldwide, and royalty-free rights to record, edit, copy, reproduce, publish, distribute, and use all or part of the manuscript for any purpose, in any media now existing or developed in the future, either individually or as part of a collection.
All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.

How to Cite

[1]
“Strain in epitaxially lifted off GaAs bonded on Gold probed via Raman spectroscopy”, Proc. SPP, vol. 26, no. 1, p. SPP-2008-PA-06, Oct. 2008, Accessed: Mar. 31, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2008-PA-06