Growth and electron microscopy characterization of Au-assisted MBE-grown GaAs nanowires on Si substrates

Authors

  • Ramon M. delos Santos National Institute of Physics, University of the Philippines Diliman
  • Jorge Michael M. Presto National Institute of Physics, University of the Philippines Diliman
  • Michelle B. Somintac Intel Technology Philippines Inc., Gateway Business Park, Cavite
  • Paul Concepcion Intel Technology Philippines Inc., Gateway Business Park, Cavite
  • Jasher John A. Ibañes National Institute of Physics, University of the Philippines Diliman
  • Joel G. Fernando National Institute of Physics, University of the Philippines Diliman and College of Science and Mathematics, Western Mindanao State University
  • Michael J. Defensor National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman
  • Armando S. Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

Gallium arsenide (GaAs) nanowires were grown by molecular beam epitaxy (MBE) on silicon (100) and (111) oriented surfaces using Au-catalyzed vapor-liquid-solid (VLS) growth mechanism. After the growth of the nanowires, surface morphologies and structural properties of the nanowire samples were analyzed by scanning electron microscopy and transmission electron microscopy. The nanowires were rodshaped with average diameters between 52 to 62 nm. On both substrates, the nanowires were crystallized in cubic zincblende structure.

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Issue

Article ID

SPP-2008-5A-01

Section

Materials Physics

Published

2008-10-22

How to Cite

[1]
RM delos Santos, JMM Presto, MB Somintac, P Concepcion, JJA Ibañes, JG Fernando, MJ Defensor, AA Salvador, and AS Somintac, Growth and electron microscopy characterization of Au-assisted MBE-grown GaAs nanowires on Si substrates, Proceedings of the Samahang Pisika ng Pilipinas 26, SPP-2008-5A-01 (2008). URL: https://proceedings.spp-online.org/article/view/SPP-2008-5A-01.