Growth and electron microscopy characterization of Au-assisted MBE-grown GaAs nanowires on Si substrates
Abstract
Gallium arsenide (GaAs) nanowires were grown by molecular beam epitaxy (MBE) on silicon (100) and (111) oriented surfaces using Au-catalyzed vapor-liquid-solid (VLS) growth mechanism. After the growth of the nanowires, surface morphologies and structural properties of the nanowire samples were analyzed by scanning electron microscopy and transmission electron microscopy. The nanowires were rodshaped with average diameters between 52 to 62 nm. On both substrates, the nanowires were crystallized in cubic zincblende structure.