Effect of partial melting and annealing on orientation, surface morphology and transport properties of Bi2Sr2CaCu2O8+δ thin films fabricated via 1064 nm Nd:YAG pulsed laser ablation
Abstract
We investigated the effect of partial melting and annealing on orientation, surface morphology and transport properties of Bi2Sr2CaCu2O8+δ (Bi-2212) films grown on single-crystalline (001) MgO substrates by pulsed laser ablation. The target was irradiated with a Q-switched 1064 nm pulsed Nd:YAG laser with repetition rate of 10 Hz, maximum energy of 1.4 J per pulsed and a nominal pulse duration (full width at half maximum) of 8 ns under a 10-2 mbar vacuum pressure and a single crystal MgO substrate (001) was used in the deposition. Island growth mechanisms were found to be dominant in the as-deposited films where as films that are partially melted with subsequent annealing shows strong two dimensional-layered structure. Partial melting at 880°C after 10 hours of annealing produced highly c-axis oriented films with smoother surface and more homogenous composition. Annealing without partial melting increases the onset of superconducting transition temperature, Tc , but sharpness of the transition is lost. Resistivity measurements showed transition widths for the best films are 5K and 19K.