Laser deposition of Bi₂Sr₂CaCu₂O_8+δ on Si (111) substrate at room temperature

Authors

Jaziel R. Vitug National Institute of Physics, University of the Philippines Diliman
Jeffrey C. de Vero National Institute of Physics, University of the Philippines Diliman
Jacque Lynn F. Gabayno National Institute of Physics, University of the Philippines Diliman
Wilson O. Garcia National Institute of Physics, University of the Philippines Diliman
Roland V. Sarmago National Institute of Physics, University of the Philippines Diliman

Abstract

Pulsed laser deposition is used to fabricate Bi₂Sr₂CaCu₂O_8+δ films on silicon (111) substrate at room temperature. A Q-switched 1064 nm pulsed Nd:YAG laser with repetition rate of 10Hz and pulse duration of 8ns (FWHM) is used as the excitation source. X-ray diffraction (XRD) measurements confirm more c-axis oriented 2212 phase for longer deposition time of as-deposited film and an intergrowth of 2201 phase for the post-annealed film. Scanning electron microscopy shows a layered film structure with some microcracks on the surface of the post annealed film due to the difference in the thermal expansion coefficient of BSCCO and silicon. Resistance-temperature (R-T) measurement confirms the superconductivity of the film with a critical temperature Tc of 57K.

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Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2008-4A-01

Section

Materials Physics

Published

2008-10-22

How to Cite

[1]

JR Vitug, JC de Vero, JLF Gabayno, WO Garcia, and RV Sarmago, Laser deposition of Bi2Sr2CaCu2O8+δ on Si (111) substrate at room temperature, Proceedings of the Samahang Pisika ng Pilipinas 26, SPP-2008-4A-01 (2008). URL: https://proceedings.spp-online.org/article/view/SPP-2008-4A-01.