Laser deposition of Bi₂Sr₂CaCu₂O_8+δ on Si (111) substrate at room temperature

Authors

Jaziel R. Vitug ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jeffrey C. de Vero ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jacque Lynn F. Gabayno ⋅ PH National Institute of Physics, University of the Philippines Diliman
Wilson O. Garcia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Roland V. Sarmago ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Pulsed laser deposition is used to fabricate Bi₂Sr₂CaCu₂O_8+δ films on silicon (111) substrate at room temperature. A Q-switched 1064 nm pulsed Nd:YAG laser with repetition rate of 10Hz and pulse duration of 8ns (FWHM) is used as the excitation source. X-ray diffraction (XRD) measurements confirm more c-axis oriented 2212 phase for longer deposition time of as-deposited film and an intergrowth of 2201 phase for the post-annealed film. Scanning electron microscopy shows a layered film structure with some microcracks on the surface of the post annealed film due to the difference in the thermal expansion coefficient of BSCCO and silicon. Resistance-temperature (R-T) measurement confirms the superconductivity of the film with a critical temperature Tc of 57K.

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Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2008-4A-01

Section

Materials Physics

Published

2008-10-22

How to Cite

[1]

JR Vitug, JC de Vero, JLF Gabayno, WO Garcia, and RV Sarmago, Laser deposition of Bi2Sr2CaCu2O8+δ on Si (111) substrate at room temperature, Proceedings of the Samahang Pisika ng Pilipinas 26, SPP-2008-4A-01 (2008). URL: https://proceedings.spp-online.org/article/view/SPP-2008-4A-01.