Fabrication of submicron V-gate via chemical etching

Authors

Miezel Talara National Institute of Physics, University of the Philippines Diliman
Hazel Molleda National Institute of Physics, University of the Philippines Diliman
Carolina Lim National Institute of Physics, University of the Philippines Diliman
Fritz Christian Awitan National Institute of Physics, University of the Philippines Diliman
Elizabeth Ann Prieto National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

In this paper, a technique to fabricate a submicron V-gate was introduced. Gate patterns with different sizes of mask opening transferred onto the substrate by UV lithography was etched chemically using NH₄OH:H₂O₂:H₂O (3:1:50). In the etching process, several parameters were investigated including crystallographic orientation, etching time, and etchant temperature. SEM images showed that for a 2 µm gate-length mask opening, preferential etching for 8 minutes of the (111) plane of the GaAs substrate produced a 393 nm V-gate. I-V characteristics of the electronbeam deposited Ti/Au (105 Å/505 Å) metals showed that Schottky contact was formed with the V-groove submicron gate.

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Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2008-3A-04

Section

Materials Physics

Published

2008-10-22

How to Cite

[1]

M Talara, H Molleda, C Lim, FC Awitan, EA Prieto, A Salvador, and A Somintac, Fabrication of submicron V-gate via chemical etching, Proceedings of the Samahang Pisika ng Pilipinas 26, SPP-2008-3A-04 (2008). URL: https://proceedings.spp-online.org/article/view/SPP-2008-3A-04.