Fabrication of submicron V-gate via chemical etching

Authors

Miezel Talara ⋅ PH National Institute of Physics, University of the Philippines Diliman
Hazel Molleda ⋅ PH National Institute of Physics, University of the Philippines Diliman
Carolina Lim ⋅ PH National Institute of Physics, University of the Philippines Diliman
Fritz Christian Awitan ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elizabeth Ann Prieto ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

In this paper, a technique to fabricate a submicron V-gate was introduced. Gate patterns with different sizes of mask opening transferred onto the substrate by UV lithography was etched chemically using NH₄OH:H₂O₂:H₂O (3:1:50). In the etching process, several parameters were investigated including crystallographic orientation, etching time, and etchant temperature. SEM images showed that for a 2 µm gate-length mask opening, preferential etching for 8 minutes of the (111) plane of the GaAs substrate produced a 393 nm V-gate. I-V characteristics of the electronbeam deposited Ti/Au (105 Å/505 Å) metals showed that Schottky contact was formed with the V-groove submicron gate.

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Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2008-3A-04

Section

Materials Physics

Published

2008-10-22

How to Cite

[1]

M Talara, H Molleda, C Lim, FC Awitan, EA Prieto, A Salvador, and A Somintac, Fabrication of submicron V-gate via chemical etching, Proceedings of the Samahang Pisika ng Pilipinas 26, SPP-2008-3A-04 (2008). URL: https://proceedings.spp-online.org/article/view/SPP-2008-3A-04.