Fabrication of submicron V-gate via chemical etching

Authors

  • Miezel Talara ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Hazel Molleda ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Carolina Lim ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Fritz Christian Awitan ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Elizabeth Ann Prieto ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

In this paper, a technique to fabricate a submicron V-gate was introduced. Gate patterns with different sizes of mask opening transferred onto the substrate by UV lithography was etched chemically using NH4OH:H2O2:H2O (3:1:50). In the etching process, several parameters were investigated including crystallographic orientation, etching time, and etchant temperature. SEM images showed that for a 2 µm gate-length mask opening, preferential etching for 8 minutes of the (111) plane of the GaAs substrate produced a 393 nm V-gate. I-V characteristics of the electronbeam deposited Ti/Au (105 Å/505 Å) metals showed that Schottky contact was formed with the V-groove submicron gate.

 

 

SPP 2008 Proceedings Cover

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Published

2008-10-22

Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Section

Materials Physics

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How to Cite

[1]
“Fabrication of submicron V-gate via chemical etching”, Proc. SPP, vol. 26, no. 1, pp. SPP–2008, Oct. 2008, Accessed: Apr. 09, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2008-3A-04