Optimization of the growth design of the MBE-grown delta-doped InxGa1-xAs pseudomorphic high-electron mobility transistor (pHEMT)

Authors

  • Carlos Baldo III National Institute of Physics, University of the Philippines Diliman
  • Jonathan Azares National Institute of Physics, University of the Philippines Diliman
  • Elizabeth Ann Prieto National Institute of Physics, University of the Philippines Diliman
  • Jennifer Anne Constantino National Institute of Physics, University of the Philippines Diliman
  • Melvin John Empizo National Institute of Physics, University of the Philippines Diliman
  • Michael Defensor National Institute of Physics, University of the Philippines Diliman
  • Jasher Ibañes National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Several delta-doped pseudomorphic High-Electron Mobility Transistors (pHEMTs) were grown via Molecular Beam Epitaxy (MBE) wherein the spacer layer thickness and growth interruption time were varied. Mobility and carrier concentrations were obtained by conducting Hall effect measurement on the grown samples at varying temperatures. Results showed that the appropriate spacer layer thickness to use for the design should not exceed 150Å. On the other hand, the appropriate growth interruption time to use for the deposition of the silicon delta-doping sheet was 5mins. The optimized delta-doped pHEMT that made used of this parameters generated large sheet concentration η = 2.68 x 1012/cm2 with enhanced mobility.

SPP 2008 Proceedings Cover

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Published

2008-10-22

Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Section

Materials Physics

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How to Cite

[1]
“Optimization of the growth design of the MBE-grown delta-doped InxGa1-xAs pseudomorphic high-electron mobility transistor (pHEMT)”, Proc. SPP, vol. 26, no. 1, pp. SPP–2008, Oct. 2008, Accessed: Mar. 24, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2008-3A-03