Investigation of the interaction between the triangular-like quantum well of a HEMT-like structure and embedded quantum dots
Abstract
We present the preliminary results of our investigation of an n-AlGaAs/GaAs HEMT-like heterostructure with InAs/GaAs quantum dots embedded near the channel. We carried out van der Pauw Hall Effect measurement and photocurrent spectroscopy of the HEMT-like heterostructure to determine the electrical and optical properties of the heterostructure. It was shown that when the distance of the InAs dots from the channel was 300 Å, the two-dimensional electron gas (2DEG) was strongly scattered as evidenced by 300 K van der Pauw Hall Effect measurement. The photocurrent response of the embedded dots was also found to peak at 1.15eV.