Enhanced GaAs terahertz emission from MBE-grown InAs/GaAs quantum dot structures

Authors

Elmer Estacio ⋅ JP Institute of Laser Engineering, Osaka University
Pham Hong Minh ⋅ JP Institute of Laser Engineering, Osaka University
Marilou Cadatal ⋅ JP Institute of Laser Engineering, Osaka University
Nobuhiko Sarukura ⋅ JP Institute of Laser Engineering, Osaka University
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Michael Defensor ⋅ PH National Institute of Physics, University of the Philippines Diliman
Alipio Garcia ⋅ PH National Institute of Physics, University of the Philippines Diliman and Department of Physical Sciences, University of the Philippines Baguio
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

We report on the intense terahertz (THz) emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that without magnetic field enhancement, the QD emission was as high as 70% of that of a p-type InAs wafer; the most intense semiconductor emitter to date. Excitation wavelength studies suggest that the emission originates from GaAs absorption and this entails a 2 order-ofmagnitude enhancement of the GaAs THz emission. Moreover, it was found that multilayer QD's emit more strongly compared with a single layer QD sample. The intense radiation is temporarily ascribed to huge strain fields at the InAs/GaAs interface.

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Published

2008-10-22

Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Section

Materials Physics

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How to Cite

[1]

“Enhanced GaAs terahertz emission from MBE-grown InAs/GaAs quantum dot structures”, Proc. SPP, vol. 26, no. 1, pp. SPP–2008, Oct. 2008, Accessed: Apr. 12, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2008-2A-04