Enhanced GaAs terahertz emission from MBE-grown InAs/GaAs quantum dot structures

Authors

Elmer Estacio ⋅ JP Institute of Laser Engineering, Osaka University
Pham Hong Minh ⋅ JP Institute of Laser Engineering, Osaka University
Marilou Cadatal ⋅ JP Institute of Laser Engineering, Osaka University
Nobuhiko Sarukura ⋅ JP Institute of Laser Engineering, Osaka University
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Michael Defensor ⋅ PH National Institute of Physics, University of the Philippines Diliman
Alipio Garcia ⋅ PH National Institute of Physics, University of the Philippines Diliman and Department of Physical Sciences, University of the Philippines Baguio
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

We report on the intense terahertz (THz) emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that without magnetic field enhancement, the QD emission was as high as 70% of that of a p-type InAs wafer; the most intense semiconductor emitter to date. Excitation wavelength studies suggest that the emission originates from GaAs absorption and this entails a 2 order-ofmagnitude enhancement of the GaAs THz emission. Moreover, it was found that multilayer QD's emit more strongly compared with a single layer QD sample. The intense radiation is temporarily ascribed to huge strain fields at the InAs/GaAs interface.

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Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2008-2A-04

Section

Materials Physics

Published

2008-10-22

How to Cite

[1]

E Estacio, HM Pham, M Cadatal, N Sarukura, A Somintac, M Defensor, A Garcia, and A Salvador, Enhanced GaAs terahertz emission from MBE-grown InAs/GaAs quantum dot structures, Proceedings of the Samahang Pisika ng Pilipinas 26, SPP-2008-2A-04 (2008). URL: https://proceedings.spp-online.org/article/view/SPP-2008-2A-04.