Investigation on the scattering mechanisms limiting electron mobility of modulation and δ-doped InGaAs pseudomorphic high electron mobility transistors

Authors

Elizabeth Ann P. Prieto National Institute of Physics, University of the Philippines Diliman
Jonathan D. Azares National Institute of Physics, University of the Philippines Diliman
Carlos F. Baldo III National Institute of Physics, University of the Philippines Diliman
Neil Irvin F. Cabello National Institute of Physics, University of the Philippines Diliman
Jan Fronimarc D. Viloria Department of Physical Sciences, University of the Philippines Baguio
Jasher John A. Ibañes National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Scattering mechanisms limiting the electron mobility of modulation and δ-doped InGaAs pseudomorphic high electron mobility transistors (pHEMTs) were determined by fitting the experimental mobility plot of the grown samples with the effective mobility due to the different scattering mechanisms. For the modulation-doped sample, it was observed that the interface roughness dominated at longer temperature range as compared to the δ-doped. In the intermediate regime all scattering mechanisms partly contributed to a certain extent while at temperature above 100K, optical polar scattering limits the electron mobility of the two samples.

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Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2008-2A-01

Section

Materials Physics

Published

2008-10-22

How to Cite

[1]

EAP Prieto, JD Azares, CF Baldo, NIF Cabello, JFD Viloria, JJA Ibañes, AS Somintac, and AA Salvador, Investigation on the scattering mechanisms limiting electron mobility of modulation and δ-doped InGaAs pseudomorphic high electron mobility transistors, Proceedings of the Samahang Pisika ng Pilipinas 26, SPP-2008-2A-01 (2008). URL: https://proceedings.spp-online.org/article/view/SPP-2008-2A-01.