Investigation on the scattering mechanisms limiting electron mobility of modulation and δ-doped InGaAs pseudomorphic high electron mobility transistors
Abstract
Scattering mechanisms limiting the electron mobility of modulation and δ-doped InGaAs pseudomorphic high electron mobility transistors (pHEMTs) were determined by fitting the experimental mobility plot of the grown samples with the effective mobility due to the different scattering mechanisms. For the modulation-doped sample, it was observed that the interface roughness dominated at longer temperature range as compared to the δ-doped. In the intermediate regime all scattering mechanisms partly contributed to a certain extent while at temperature above 100K, optical polar scattering limits the electron mobility of the two samples.