Characterization of a surface-emitting diode using infrared-optical beam induced resistance change

Authors

  • Raymund C. Sarmiento ⋅ PH National Institute of Physics, University of the Philippines Diliman and Department of Physics, University of San Carlos
  • Vernon Julius Cemine ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Imee Rose Tagaca ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Carlo Mar Blanca ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Caesar Saloma ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

We apply the infrared-optical beam induced resistance change (IR-OBIRCH) technique to evaluate the quality of a p-i-n diode. Using an optical-feedback confocal laser diode microscope, an image is acquired while the same beam induces local resistance changes on the device. A current/resistance map of the device can then be obtained. The method was able to distinguish between functional and faulty devices in a matrix of diodes. Unlike the optical beam induced current (OBIC) method, the OBIRCH method can also map out resistance inhomogeneities in the metal and semiconductor regions.

SPP 2007 Proceedings Cover

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Published

2007-10-24

Issue

2007: Proceedings of the 25th Samahang Pisika ng Pilipinas Physics Congress

Section

Plenary Sessions

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How to Cite

[1]
“Characterization of a surface-emitting diode using infrared-optical beam induced resistance change”, Proc. SPP, vol. 25, no. 1, p. SPP-2007-PR-05, Oct. 2007, Accessed: Apr. 02, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2007-PR-05