Characterization of a surface-emitting diode using infrared-optical beam induced resistance change

Authors

Raymund C. Sarmiento ⋅ PH National Institute of Physics, University of the Philippines Diliman and Department of Physics, University of San Carlos
Vernon Julius Cemine ⋅ PH National Institute of Physics, University of the Philippines Diliman
Imee Rose Tagaca ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Carlo Mar Blanca ⋅ PH National Institute of Physics, University of the Philippines Diliman
Caesar Saloma ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

We apply the infrared-optical beam induced resistance change (IR-OBIRCH) technique to evaluate the quality of a p-i-n diode. Using an optical-feedback confocal laser diode microscope, an image is acquired while the same beam induces local resistance changes on the device. A current/resistance map of the device can then be obtained. The method was able to distinguish between functional and faulty devices in a matrix of diodes. Unlike the optical beam induced current (OBIC) method, the OBIRCH method can also map out resistance inhomogeneities in the metal and semiconductor regions.

Downloads

Issue

2007: Proceedings of the 25th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2007-PR-05

Section

Plenary Sessions

Published

2007-10-24

How to Cite

[1]

RC Sarmiento, VJ Cemine, IR Tagaca, A Salvador, CM Blanca, and C Saloma, Characterization of a surface-emitting diode using infrared-optical beam induced resistance change, Proceedings of the Samahang Pisika ng Pilipinas 25, SPP-2007-PR-05 (2007). URL: https://proceedings.spp-online.org/article/view/SPP-2007-PR-05.