Relationship of absorbed microwave power to electron density and electron temperature in a 2.45-ghz microwave plasma device
Abstract
A 2.45-GHz microwave plasma device is operated with a 10-mTorr argon plasma load under different 3-stub tuner settings. A bidirectional coupler and crystal detectors are added in the device to measure the forward and reverse microwave power, which enables an estimation of the microwave power absorbed by the argon plasma. These power measurements are then correlated with the electron density and electron temperature of the plasma. Results show that high microwave power absorbed by the plasma is commonly manifested as high electron density of the plasma.
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