Relationship of absorbed microwave power to electron density and electron temperature in a 2.45-ghz microwave plasma device

Authors

Marko E. Arciaga ⋅ PH National Institute of Physics, University of the Philippines Diliman
April M. Ulano ⋅ PH National Institute of Physics, University of the Philippines Diliman
Roy B. Tumlos ⋅ PH Department of Physical Sciences and Mathematics, University of the Philippines Manila

Abstract

A 2.45-GHz microwave plasma device is operated with a 10-mTorr argon plasma load under different 3-stub tuner settings. A bidirectional coupler and crystal detectors are added in the device to measure the forward and reverse microwave power, which enables an estimation of the microwave power absorbed by the argon plasma. These power measurements are then correlated with the electron density and electron temperature of the plasma. Results show that high microwave power absorbed by the plasma is commonly manifested as high electron density of the plasma.

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Issue

2007: Proceedings of the 25th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2007-PB-28

Section

Poster Session PB

Published

2007-10-24

How to Cite

[1]

ME Arciaga, AM Ulano, and RB Tumlos, Relationship of absorbed microwave power to electron density and electron temperature in a 2.45-ghz microwave plasma device, Proceedings of the Samahang Pisika ng Pilipinas 25, SPP-2007-PB-28 (2007). URL: https://proceedings.spp-online.org/article/view/SPP-2007-PB-28.