Growth of a multilayer dielectric stack via Plasma Enhanced Chemical Vapor Deposition

Authors

Dyna Immaculate B. Garcia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Ryan N. Alentajan ⋅ PH National Institute of Physics, University of the Philippines Diliman
Michael J. Defensor ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

A multilayer dielectric stack was grown via Plasma Enhanced Chemical Vapor Deposition (PECVD) using SiH₄, N₂ and N₂O gases. Six pairs of alternating layers of Si_xN_y/SiO₂ were deposited on an n-type Silicon substrate. The deposition temperature, pressure and RF power are 350°C, 9 x 10⁻¹mbar and 100 W, respectively. The multilayers are designed to reflect in the infrared wavelength. Analysis of the grown multilayer was done using a phase modulated spectroscopic ellipsometry (SE) in reflection mode. Results show that the grown multilayer dielectric stack exhibit high reflectivity centered at 840 nm when observed at an angle of 45°. This shows an 11.25% deviation from the designed multilayer center wavelength.

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Issue

2007: Proceedings of the 25th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2007-PB-09

Section

Poster Session PB

Published

2007-10-24

How to Cite

[1]

DIB Garcia, RN Alentajan, MJ Defensor, and AA Salvador, Growth of a multilayer dielectric stack via Plasma Enhanced Chemical Vapor Deposition, Proceedings of the Samahang Pisika ng Pilipinas 25, SPP-2007-PB-09 (2007). URL: https://proceedings.spp-online.org/article/view/SPP-2007-PB-09.