Simulation of a pn junction using Microsoft Visual Basic 6.0
Abstract
The functionality of the semiconductor electronics focuses in the formation and use of a pn junction. This study was conducted to construct a program that will present a simulation of a pn junction at equilibrium and at the biased state. The program was constructed using Microsoft Visual Basics 6.0. It included the simulation of Silicon (Si), Germanium (Ge) and Gallium Arsenide (GaAs) on junctions of varying barrier potentials (Vbias), when in equilibrium, reverse bias and forward bias. The simulation aims to provide a model of a pn junction that is animated and close to reality. Hence, through this, there can be a new approach in studying the pn junction which can be creative, interactive and fun.