Room temperature Raman scattering study of In_xGa_1–xAs 0.35 ≤ x ≤ 0.70 on InP substrates

Authors

Rafael B. Jaculbia National Institute of Physics, University of the Philippines Diliman
Cheena C. Oblepias National Institute of Physics, University of the Philippines Diliman
Michael J. Defensor National Institute of Physics, University of the Philippines Diliman
Cherry May Mateo National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Room temperature Raman scattering measurements was performed on In_xGa_1−xAs structures with different compositional fraction x. An In_xGa_1−xAs LO phonon peak and an InAs-like phonon mode were observed for all samples. The appearance of a symmetry forbidden mode for larger indium content was also reported. The LO phonon peak was found to move to higher Raman shifts and the InAs like features become less prominent as the mole fraction is decreased. Results demonstrated the use of Raman scattering in characterization of bulk semiconductors specifically, in probing of the crystal quality of InGaAs.

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Issue

2007: Proceedings of the 25th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2007-3D-05

Section

Condensed Matter Physics

Published

2007-10-24

How to Cite

[1]

RB Jaculbia, CC Oblepias, MJ Defensor, CM Mateo, AS Somintac, and AA Salvador, Room temperature Raman scattering study of InxGa1–xAs 0.35 ≤ x ≤ 0.70 on InP substrates, Proceedings of the Samahang Pisika ng Pilipinas 25, SPP-2007-3D-05 (2007). URL: https://proceedings.spp-online.org/article/view/SPP-2007-3D-05.