Strain mechanism in the epitaxially lifted off GaAs film bonded to MgO

Authors

Cherry May Mateo National Institute of Physics, University of the Philippines Diliman
Alipio Garcia National Institute of Physics, University of the Philippines Diliman
Flo Rykiel Ramos National Institute of Physics, University of the Philippines Diliman
Michael Defensor National Institute of Physics, University of the Philippines Diliman
Rafael Jaculbia National Institute of Physics, University of the Philippines Diliman
Elizabeth Ann Prieto National Institute of Physics, University of the Philippines Diliman
Jeremy Porquez National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Thermal strain effects in GaAs film bonded to MgO using epitaxial lift off (ELO) technique were investigated by means of low temperature photoluminescence spectroscopy and reflectivity. As compared to the non-ELO-prepared sample, the GaAs bonded to MgO, showed a clear valence band splitting which was due to the difference in the thermal expansion coefficients of the GaAs and MgO. Aside from the valence band splitting, the energy gap of the GaAs blue shifted, which translates to a compressive strain introduced in GaAs film. This demonstrates that the use of ELO technique can be extended to introduce compressive strain in GaAs.

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Issue

2007: Proceedings of the 25th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2007-3A-02

Section

Condensed Matter Physics

Published

2007-10-24

How to Cite

[1]

CM Mateo, A Garcia, FR Ramos, M Defensor, R Jaculbia, EA Prieto, J Porquez, and A Salvador, Strain mechanism in the epitaxially lifted off GaAs film bonded to MgO, Proceedings of the Samahang Pisika ng Pilipinas 25, SPP-2007-3A-02 (2007). URL: https://proceedings.spp-online.org/article/view/SPP-2007-3A-02.