Rapid cooling of uncapped indium arsenide quantum dot surfaces grown in Stranski-Krastanow mode by MBE

Authors

Alipio T. Garcia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Michelle F. B. Somintac ⋅ PH Quality and Reliability Department, Intel Technology Philippines, Inc.

Abstract

We report a method to significantly improve the density of quantum dots (QD) grown by molecular beam epitaxy. The use of high As₄ (tetrameric arsenic) beam equivalent pressure during Stranski-Krastanow growth led to low density QD formation as seen from cross-section transmission electron microscopy (XTEM). By rapidly cooling this uncapped low density QD layer of critical coverage from the growth temperature of 490°C to 300°C, we were able to effect several orders of magnitude increase in density and enhanced uniformity. Atomic force microscopy (AFM) of surfaces reveal more pronounced density enhancement in QDs grown at higher As₄ pressure. This effect is explained on the basis of Group III adatom condensation and surface diffusion.

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Issue

2007: Proceedings of the 25th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2007-3A-01

Section

Condensed Matter Physics

Published

2007-10-24

How to Cite

[1]

AT Garcia, AA Salvador, and MFB Somintac, Rapid cooling of uncapped indium arsenide quantum dot surfaces grown in Stranski-Krastanow mode by MBE, Proceedings of the Samahang Pisika ng Pilipinas 25, SPP-2007-3A-01 (2007). URL: https://proceedings.spp-online.org/article/view/SPP-2007-3A-01.