Modeling the photoluminescence decay of an oxide-confined vertical-cavity surface-emitting laser
Abstract
Measurements of the time resolved photoluminescence decay of oxide-confined vertical-cavity surface-emitting laser and its unoxidized counterpart showed a shorter decay time of 370 ps for the oxidized VCSEL compared to the 1200 ps decay time for its unoxidized counterpart. To account for the observed difference in PL decay times, the optical field in the device and the radial temporal distribution of the carrier concentration were calculated using a model based on a fiber optic waveguide. The transverse optical field for the oxidized device is seen to be amplified. In the region were there is an amplified optical field, a faster decay of the carrier density is predicted. Good agreement with the carrier decay calculated in the model and that seen in the TRPL was observed.