Low temperature synthesis of silicon carbide nanowires

Abstract

Synthesis of silicon carbide nanowires was achieved by solid state reaction at low temperature with prior vibrational ball milling. From Silicon and Carbon powders, SiC nanowires were formed by 14 hours milling followed by annealing for 2 hours at 900°C under Argon gas environment. The size and mass of the milling media (stainless steel balls) have an effect on the grain size reduction of the powders and consequently on the low temperature synthesis of silicon carbide nanowires. Diameter of nanowires formed range from 38 to 43 nm.