Reactive ion etching of plasma-grown thin films

Authors

  • Jennifer Anne S. Constantino ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Michael J. Defensor ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Alipio T. Garcia ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Romelyn H. Sotto ⋅ PH Department of Mining, Metallurgical and Materials Engineering, University of the Philippines Diliman

Abstract

Reactive ion etching of GaAs substrates with plasma-deposited Silicon Nitride (SixNy) and Silicon Dioxide (SiO2) thin films was done through the use of a modified Fluorine-based RIE setup. Resist stripe and spiral patterns were used to determine the feasibility of CHF3/O2 etching of plasma-grown thin films using the set-up. Successful etching of the plasma-deposited layers shows the viability of using the modified set-up for further applications in surface cleaning and etching.

SPP 2007 Proceedings Cover

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Published

2007-10-24

Issue

2007: Proceedings of the 25th Samahang Pisika ng Pilipinas Physics Congress

Section

Condensed Matter Physics

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How to Cite

[1]
“Reactive ion etching of plasma-grown thin films”, Proc. SPP, vol. 25, no. 1, pp. SPP–2007, Oct. 2007, Accessed: Apr. 02, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2007-1D-04