Reactive ion etching of plasma-grown thin films

Authors

  • Jennifer Anne S. Constantino National Institute of Physics, University of the Philippines Diliman
  • Michael J. Defensor National Institute of Physics, University of the Philippines Diliman
  • Alipio T. Garcia National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman
  • Romelyn H. Sotto Department of Mining, Metallurgical and Materials Engineering, University of the Philippines Diliman

Abstract

Reactive ion etching of GaAs substrates with plasma-deposited Silicon Nitride (SixNy) and Silicon Dioxide (SiO2) thin films was done through the use of a modified Fluorine-based RIE setup. Resist stripe and spiral patterns were used to determine the feasibility of CHF3/O2 etching of plasma-grown thin films using the set-up. Successful etching of the plasma-deposited layers shows the viability of using the modified set-up for further applications in surface cleaning and etching.

Downloads

Issue

Article ID

SPP-2007-1D-04

Section

Condensed Matter Physics

Published

2007-10-24

How to Cite

[1]
JAS Constantino, MJ Defensor, AT Garcia, AA Salvador, and RH Sotto, Reactive ion etching of plasma-grown thin films, Proceedings of the Samahang Pisika ng Pilipinas 25, SPP-2007-1D-04 (2007). URL: https://proceedings.spp-online.org/article/view/SPP-2007-1D-04.