Reactive ion etching of plasma-grown thin films

Authors

Jennifer Anne S. Constantino ⋅ PH National Institute of Physics, University of the Philippines Diliman
Michael J. Defensor ⋅ PH National Institute of Physics, University of the Philippines Diliman
Alipio T. Garcia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Romelyn H. Sotto ⋅ PH Department of Mining, Metallurgical and Materials Engineering, University of the Philippines Diliman

Abstract

Reactive ion etching of GaAs substrates with plasma-deposited Silicon Nitride (Si_xN_y) and Silicon Dioxide (SiO₂) thin films was done through the use of a modified Fluorine-based RIE setup. Resist stripe and spiral patterns were used to determine the feasibility of CHF₃/O₂ etching of plasma-grown thin films using the set-up. Successful etching of the plasma-deposited layers shows the viability of using the modified set-up for further applications in surface cleaning and etching.

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Issue

2007: Proceedings of the 25th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2007-1D-04

Section

Condensed Matter Physics

Published

2007-10-24

How to Cite

[1]

JAS Constantino, MJ Defensor, AT Garcia, AA Salvador, and RH Sotto, Reactive ion etching of plasma-grown thin films, Proceedings of the Samahang Pisika ng Pilipinas 25, SPP-2007-1D-04 (2007). URL: https://proceedings.spp-online.org/article/view/SPP-2007-1D-04.