Probing interface layer qualities of GaAs/AlGaAs modulation-doped heterostructures using magnetic field-enhanced THz emission spectroscopy
Abstract
The magnetic field-enhanced terahertz (THz) emission from GaAs/AlGaAs modulation-doped heterostructures (MDH's) is studied in the context of assessing the quality of the GaAs/AlGaAs interface in relation to junction electric field and mobility. Three MDH samples with varying AlGaAs spacer thickness were investigated. The most intense THz radiation was observed for the MDH sample having the thinnest spacer layer. The effect of changing the polarity of a magnetic field applied parallel to the sample surface plane on THz radiation power is then presented. Results show that flipping the direction of the transverse 1-T magnetic field modifies the extent of field-induced THz radiation enhancement and is also dependent on the spacer layer thickness. The thin spacer layer sample appears to be least affected by the applied field polarity.
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