Strain-induced splitting of the valence band in epitaxially lifted-off GaAs films

Authors

Cherry May Mateo National Institute of Physics, University of the Philippines Diliman
Alipio Garcia National Institute of Physics, University of the Philippines Diliman
Flo Rykiel Ramos National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

We report a detailed study of strain effects on Epitaxial lift-off prepared GaAs film on Silicon substrate. Variable temperature photoluminescence and reflectivity spectra of GaAs film grown on GaAs substrate and GaAs film bonded to silicon by ELO were studied. No valence band splitting was observed for the first film but the last film showed a clear splitting of the valence heavy hole and light hole band. At 10 K the light hole-heavy hole separation was 4.2 meV and decreased to 3.9 at 100 K. At room temperature no valence band splitting was observed. The observed splitting is attributed to strain induced effects due to the difference between the thermal expansion coefficients of the GaAs film and the Si substrate. This shows the efficacy of using ELO techniques on dissimilar materials for strain related spectroscopy.

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Issue

2006: Proceedings of the 24th Samahang Pisika ng Pilipinas National Physics Congress

Article ID

SPP-2006-PA-26

Section

Poster Session PA

Published

2006-10-25

How to Cite

[1]

CM Mateo, A Garcia, FR Ramos, and A Salvador, Strain-induced splitting of the valence band in epitaxially lifted-off GaAs films, Proceedings of the Samahang Pisika ng Pilipinas 24, SPP-2006-PA-26 (2006). URL: https://proceedings.spp-online.org/article/view/SPP-2006-PA-26.