Conductive atomic force microscopy of plasma sputter-type ion source deposited gallium nitride thin films

Authors

Paul C. Concepcion ⋅ PH Intel Technology Philippines, Inc.
Edmundo P. Casulla ⋅ PH Intel Technology Philippines, Inc.
Randolph E. Flauta ⋅ PH Philips Semiconductors Calamba, Laguna
Henry J. Ramos ⋅ PH National Institute of Physics, University of the Philippines Diliman
Motoi Wada ⋅ JP Department of Electronics, Doshisha University, Japan

Abstract

Conductive Atomic Force Microscopy (C-AFM) was used to investigate the conductivity of polycrystalline GaN on silicon (100) deposited via the low temperature plasma sputtering technique. Current maps and surface topography were simultaneously measured showing hillocks with triangular facets. Only on these hillocks that current conduction was observed both on the forward and reverse bias. Local I-V curve measurement shows less reverse current leakage which suggest more nominal rectifying Schottky behavior. Current section analysis of each hillock also revealed relatively low current leakage in one face of the triangular facets. The facet with higher conduction is probably the N-face of the crystal. It was also observed that after successive scan, the current leakages decreases which could be explained by the effect of trapped charges.

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Issue

2006: Proceedings of the 24th Samahang Pisika ng Pilipinas National Physics Congress

Article ID

SPP-2006-2D-02

Section

Materials Science

Published

2006-10-25

How to Cite

[1]

PC Concepcion, EP Casulla, RE Flauta, HJ Ramos, and M Wada, Conductive atomic force microscopy of plasma sputter-type ion source deposited gallium nitride thin films, Proceedings of the Samahang Pisika ng Pilipinas 24, SPP-2006-2D-02 (2006). URL: https://proceedings.spp-online.org/article/view/SPP-2006-2D-02.