Device fabrication and DC characteristics of AlGaAs/GaAs high electron mobility transistors

Authors

Kristin Ma. Angelus N. Bautista ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

We report the successful fabrication of functional AlGaAs/GaAs high electron mobility transistors using standard photolithography techniques. The fabrication process involved three lithography steps: (a) ohmic contact formation, (b) etch trench and (c) gate formation. AuGe/Ni/Au was utilized for the source and drain ohmic contacts and Al for the Schottky gate contact. Thermal annealing of AuGe/Ni/Au to form ohmic contacts was first optimized to obtain the lowest contact resistance prior to actual HEMT fabrication. Transmission line measurement was used to determine contact resistance. The lowest ρ_c value of 8.06 x 10⁻⁵Ωcm² was obtained at an annealing temperature of 480°C. Finally, the DC characteristics of the device at room temperature were investigated. A transconductance of 300 μS and I_DSS of 554 μA were measured for the device.

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Issue

2005: Proceedings of the 23rd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2005-PR-04

Section

Plenary Sessions

Published

2005-10-26

How to Cite

[1]

KMAN Bautista, A Somintac, and A Salvador, Device fabrication and DC characteristics of AlGaAs/GaAs high electron mobility transistors, Proceedings of the Samahang Pisika ng Pilipinas 23, SPP-2005-PR-04 (2005). URL: https://proceedings.spp-online.org/article/view/SPP-2005-PR-04.