Effects of annealing temperature and amount of tin on resistance of Al-Sn-Ni ohmic contact on N-type GaAs substrate

Authors

Maria Celine P. Alarcon ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
Marites E. Caspillo ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
Rowella Y. Limpin ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
Roland V. Sarmago ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

The Al-Sn-Ni alloy ohmic contact for N-type GaAs were studied and optimized. A simple method of metal deposition using the Thermal Vacuum Evaporator was utilized. In this paper, the effect of varying amount of Sn to be deposited on GaAs and the annealing temperature for the alloy was reported. IV measurement of the devices showed a straightline IV characteristics and that high Sn content and high annealing temperature yields low resistance readings. Average contact resistance at this optimum setting is 96.97 Ω.

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Issue

2005: Proceedings of the 23rd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2005-PB-19

Section

Poster Session PB

Published

2005-10-26

How to Cite

[1]

MCP Alarcon, ME Caspillo, RY Limpin, and RV Sarmago, Effects of annealing temperature and amount of tin on resistance of Al-Sn-Ni ohmic contact on N-type GaAs substrate, Proceedings of the Samahang Pisika ng Pilipinas 23, SPP-2005-PB-19 (2005). URL: https://proceedings.spp-online.org/article/view/SPP-2005-PB-19.