Growth and characterization of lattice matched In0.53Ga0.47As/InP p-n junctions

Authors

  • Frantessa T. Casco National Institute of Physics, University of the Philippines Diliman
  • John Vincent Misa National Institute of Physics, University of the Philippines Diliman
  • Arnita Podpod National Institute of Physics, University of the Philippines Diliman
  • Kristin Ma. Angelus Bautista National Institute of Physics, University of the Philippines Diliman
  • Valynn Katrine Mag-usara National Institute of Physics, University of the Philippines Diliman
  • Jennette Mateo National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

In0.53Ga0.47As p-n junctions were grown on n-type InP (100) substrates by molecular beam epitaxy. Lattice matched samples were grown at a substrate temperature of 490°C and In/Ga flux ratio of 1.53. X-ray diffraction analyses confirm lattice matching of the grown layers. A growth rate of 1.85 x 10−4 Î¼m/s was obtained using scanning electron microscopy. Room temperature photocurrent measurements of the fabricated device show the onset of absorbance at 1.5 μm and peaks at 12.5 μm to 13 μm.

SPP 2005 Proceedings Cover

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Published

2005-10-26

Issue

2005: Proceedings of the 23rd Samahang Pisika ng Pilipinas Physics Congress

Section

Poster Session PB

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By submitting their manuscript to the Samahang Pisika ng Pilipinas (SPP) for consideration, the Authors warrant that their work is original, does not infringe on existing copyrights, and is not under active consideration for publication elsewhere.
Upon acceptance of their manuscript, the Authors further agree to grant SPP the non-exclusive, worldwide, and royalty-free rights to record, edit, copy, reproduce, publish, distribute, and use all or part of the manuscript for any purpose, in any media now existing or developed in the future, either individually or as part of a collection.
All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.

How to Cite

[1]
“Growth and characterization of lattice matched In0.53Ga0.47As/InP p-n junctions”, Proc. SPP, vol. 23, no. 1, p. SPP-2005-PB-12, Oct. 2005, Accessed: Mar. 25, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2005-PB-12