Growth and characterization of lattice matched In_0.53Ga_0.47As/InP p-n junctions

Authors

Frantessa T. Casco ⋅ PH National Institute of Physics, University of the Philippines Diliman
John Vincent Misa ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnita Podpod ⋅ PH National Institute of Physics, University of the Philippines Diliman
Kristin Ma. Angelus Bautista ⋅ PH National Institute of Physics, University of the Philippines Diliman
Valynn Katrine Mag-usara ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jennette Mateo ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

In_0.53Ga_0.47As p-n junctions were grown on n-type InP (100) substrates by molecular beam epitaxy. Lattice matched samples were grown at a substrate temperature of 490°C and In/Ga flux ratio of 1.53. X-ray diffraction analyses confirm lattice matching of the grown layers. A growth rate of 1.85 x 10⁻⁴ μm/s was obtained using scanning electron microscopy. Room temperature photocurrent measurements of the fabricated device show the onset of absorbance at 1.5 μm and peaks at 12.5 μm to 13 μm.

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Issue

2005: Proceedings of the 23rd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2005-PB-12

Section

Poster Session PB

Published

2005-10-26

How to Cite

[1]

FT Casco, JV Misa, A Podpod, KMA Bautista, VK Mag-usara, J Mateo, and A Salvador, Growth and characterization of lattice matched In0.53Ga0.47As/InP p-n junctions, Proceedings of the Samahang Pisika ng Pilipinas 23, SPP-2005-PB-12 (2005). URL: https://proceedings.spp-online.org/article/view/SPP-2005-PB-12.