Growth and characterization of lattice matched In0.53Ga0.47As/InP p-n junctions
Abstract
In0.53Ga0.47As p-n junctions were grown on n-type InP (100) substrates by molecular beam epitaxy. Lattice matched samples were grown at a substrate temperature of 490°C and In/Ga flux ratio of 1.53. X-ray diffraction analyses confirm lattice matching of the grown layers. A growth rate of 1.85 x 10−4 μm/s was obtained using scanning electron microscopy. Room temperature photocurrent measurements of the fabricated device show the onset of absorbance at 1.5 μm and peaks at 12.5 μm to 13 μm.
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Physics connects
26-28 October 2005, Central Philippine University, Iloilo City