Growth and characterization of lattice matched In_0.53Ga_0.47As/InP p-n junctions

Authors

Frantessa T. Casco National Institute of Physics, University of the Philippines Diliman
John Vincent Misa National Institute of Physics, University of the Philippines Diliman
Arnita Podpod National Institute of Physics, University of the Philippines Diliman
Kristin Ma. Angelus Bautista National Institute of Physics, University of the Philippines Diliman
Valynn Katrine Mag-usara National Institute of Physics, University of the Philippines Diliman
Jennette Mateo National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

In_0.53Ga_0.47As p-n junctions were grown on n-type InP (100) substrates by molecular beam epitaxy. Lattice matched samples were grown at a substrate temperature of 490°C and In/Ga flux ratio of 1.53. X-ray diffraction analyses confirm lattice matching of the grown layers. A growth rate of 1.85 x 10⁻⁴ μm/s was obtained using scanning electron microscopy. Room temperature photocurrent measurements of the fabricated device show the onset of absorbance at 1.5 μm and peaks at 12.5 μm to 13 μm.

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Issue

2005: Proceedings of the 23rd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2005-PB-12

Section

Poster Session PB

Published

2005-10-26

How to Cite

[1]

FT Casco, JV Misa, A Podpod, KMA Bautista, VK Mag-usara, J Mateo, and A Salvador, Growth and characterization of lattice matched In0.53Ga0.47As/InP p-n junctions, Proceedings of the Samahang Pisika ng Pilipinas 23, SPP-2005-PB-12 (2005). URL: https://proceedings.spp-online.org/article/view/SPP-2005-PB-12.