Power law behavior analysis of silicon's surface photovoltage transient response in MOSFET

Abstract

The surface photovoltage (SPV) transient measurement behavior was analyzed, using the power law analysis. Equations for the SPV rise and fall during light on and off status were derived from the plots of the logarithms of SPV and time, which was found out to be linear. The slope denoted as the scaling factor, is also the fractal dimension in fractal geometry describing the geometry of a certain spatial figure or object. It was then inferred that SPV vs. time response has a fractal nature in such a way that the scaling factor obtained is invariant leading to the conclusion that SPV transient response behavior is independent of the measuring technique (amplification, etc.) done in the measurement, and also of the time interval used.