Monte Carlo simulation of conduction electron concentration distributions in phosphorus-doped germanium

Authors

Darwin B. Putungan ⋅ PH Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños
Alexandra B. Santos ⋅ PH Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños

Abstract

The conduction electron concentration distribution of P-doped germanium was analyzed statistically using Monte Carlo simulation. Four input uniform distributions were used: LDHT (Low Donor Concentration High Temperature), LDLT (Low Donor Concentration Low Temeprature), HDLT (High Donor Concentration Low Temperature) and HDHT (High Donor Concentration High Temperature). Random inputs of donor concentration and temperature were generated and were used to stochastically simulate the conduction electron concentration model. Resulting distributions were treated statistically, and analyses were made regarding the sensitivity of the conduction electron concentration model under stochastic conditions.

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Issue

2005: Proceedings of the 23rd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2005-PB-04

Section

Poster Session PB

Published

2005-10-26

How to Cite

[1]

DB Putungan and AB Santos, Monte Carlo simulation of conduction electron concentration distributions in phosphorus-doped germanium, Proceedings of the Samahang Pisika ng Pilipinas 23, SPP-2005-PB-04 (2005). URL: https://proceedings.spp-online.org/article/view/SPP-2005-PB-04.