Monte Carlo simulation of conduction electron concentration distributions in phosphorus-doped germanium

Abstract

The conduction electron concentration distribution of P-doped germanium was analyzed statistically using Monte Carlo simulation. Four input uniform distributions were used: LDHT (Low Donor Concentration High Temperature), LDLT (Low Donor Concentration Low Temeprature), HDLT (High Donor Concentration Low Temperature) and HDHT (High Donor Concentration High Temperature). Random inputs of donor concentration and temperature were generated and were used to stochastically simulate the conduction electron concentration model. Resulting distributions were treated statistically, and analyses were made regarding the sensitivity of the conduction electron concentration model under stochastic conditions.