Enhanced response time of GaAs based p-i-n photodetector

Authors

  • Loraine T. Suba ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Kristin Ma. Angelus N. Bautista ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Valynn Katrine P. Mag-usara ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Jennette N. Mateo ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Florencio D. Recoleto ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

The effects of thin p-region and small active area on the speed performance of an MBE-grown GaAs-based p-i-n photodetectors were investigated. These were done by conducting a time resolved photocurrent measurement using the femtosecond laser facility and a 1 GHz oscilloscope. Results show that the 250 μm diameter photodetector with thin p-layer of around 0.22 μm exhibited a time response of approximately 0.45 ns. This gives a seven-fold speed improvement compared to the previously reported p-i-n photodetector with the same device structure but has a thick player of around 1 μm. This is due to the thinner pregion, which makes the carriers to traverse the said region at a shorter time and be swept immediately to the depletion region.
Moreover, the response time for 100 μm diameter thin p-layer photodetector was enhanced to 0.16 ns. The significant increase in the temporal response is due to smaller active area that reduces the capacitance of the limited RC time constant.

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Issue

Article ID

SPP-2005-PA-26

Section

Poster Session PA

Published

2005-10-26

How to Cite

[1]
LT Suba, KMAN Bautista, VKP Mag-usara, JN Mateo, FD Recoleto, and AA Salvador, Enhanced response time of GaAs based p-i-n photodetector, Proceedings of the Samahang Pisika ng Pilipinas 23, SPP-2005-PA-26 (2005). URL: https://proceedings.spp-online.org/article/view/SPP-2005-PA-26.