Enhanced response time of GaAs based p-i-n photodetector

Authors

  • Loraine T. Suba National Institute of Physics, University of the Philippines Diliman
  • Kristin Ma. Angelus N. Bautista National Institute of Physics, University of the Philippines Diliman
  • Valynn Katrine P. Mag-usara National Institute of Physics, University of the Philippines Diliman
  • Jennette N. Mateo National Institute of Physics, University of the Philippines Diliman
  • Florencio D. Recoleto National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

The effects of thin p-region and small active area on the speed performance of an MBE-grown GaAs-based p-i-n photodetectors were investigated. These were done by conducting a time resolved photocurrent measurement using the femtosecond laser facility and a 1 GHz oscilloscope. Results show that the 250 μm diameter photodetector with thin p-layer of around 0.22 μm exhibited a time response of approximately 0.45 ns. This gives a seven-fold speed improvement compared to the previously reported p-i-n photodetector with the same device structure but has a thick player of around 1 μm. This is due to the thinner pregion, which makes the carriers to traverse the said region at a shorter time and be swept immediately to the depletion region.
Moreover, the response time for 100 μm diameter thin p-layer photodetector was enhanced to 0.16 ns. The significant increase in the temporal response is due to smaller active area that reduces the capacitance of the limited RC time constant.

SPP 2005 Proceedings Cover

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Published

2005-10-26

Issue

2005: Proceedings of the 23rd Samahang Pisika ng Pilipinas Physics Congress

Section

Poster Session PA

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How to Cite

[1]
“Enhanced response time of GaAs based p-i-n photodetector”, Proc. SPP, vol. 23, no. 1, p. SPP-2005-PA-26, Oct. 2005, Accessed: Mar. 29, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2005-PA-26