Localized thermal gradient mapping of the external quantum efficiency of a silicon photodiode

Authors

Vernon Julius Cemine ⋅ PH National Institute of Physics, University of the Philippines Diliman
Carlo Mar Blanca ⋅ PH National Institute of Physics, University of the Philippines Diliman
Caesar Saloma ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Localized thermal gradient mapping of the external quantum efficiency of a silicon photodiode is presented as the photodiode ambient temperature is set at: 28, 38, 48 and 58°C. High discrimination of the three regions: (1) the region where the p-type overlays the n-type semiconductor, (2) the region of pure n-type semiconductor, and (3) the metallic region, was realized based on the obtained thermal maps. Imaging is undertaken using a custom-built Simultaneous Optical-Feedback Confocal and Optical Beam-Induced Current (SOFCOBIC) Microscope.

Downloads

Issue

2005: Proceedings of the 23rd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2005-3G-04

Section

Materials Science

Published

2005-10-26

How to Cite

[1]

VJ Cemine, CM Blanca, and C Saloma, Localized thermal gradient mapping of the external quantum efficiency of a silicon photodiode, Proceedings of the Samahang Pisika ng Pilipinas 23, SPP-2005-3G-04 (2005). URL: https://proceedings.spp-online.org/article/view/SPP-2005-3G-04.