Localized thermal gradient mapping of the external quantum efficiency of a silicon photodiode

Authors

  • Vernon Julius Cemine National Institute of Physics, University of the Philippines Diliman
  • Carlo Mar Blanca National Institute of Physics, University of the Philippines Diliman
  • Caesar Saloma National Institute of Physics, University of the Philippines Diliman

Abstract

Localized thermal gradient mapping of the external quantum efficiency of a silicon photodiode is presented as the photodiode ambient temperature is set at: 28, 38, 48 and 58°C. High discrimination of the three regions: (1) the region where the p-type overlays the n-type semiconductor, (2) the region of pure n-type semiconductor, and (3) the metallic region, was realized based on the obtained thermal maps. Imaging is undertaken using a custom-built Simultaneous Optical-Feedback Confocal and Optical Beam-Induced Current (SOFCOBIC) Microscope.

SPP 2005 Proceedings Cover

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Published

2005-10-26

Issue

2005: Proceedings of the 23rd Samahang Pisika ng Pilipinas Physics Congress

Section

Materials Science

License

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Upon acceptance of their manuscript, the Authors further agree to grant SPP the non-exclusive, worldwide, and royalty-free rights to record, edit, copy, reproduce, publish, distribute, and use all or part of the manuscript for any purpose, in any media now existing or developed in the future, either individually or as part of a collection.
All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.

How to Cite

[1]
“Localized thermal gradient mapping of the external quantum efficiency of a silicon photodiode”, Proc. SPP, vol. 23, no. 1, pp. SPP–2005, Oct. 2005, Accessed: Mar. 30, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2005-3G-04