Oxidation barrier to vertical cavity surface-emitting laser (VCSEL) structures

Authors

Mark Jayson Llena National Institute of Physics, University of the Philippines Diliman
Alipio Garcia National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

SiO₂ and polyimide were investigated as oxidation barriers deposited on 50 µm stripes mesa patterns of Vertical Cavity Surface-Emitting Laser (VCSEL) structures. Scanning Electron Microscope (SEM) micrographs revealed that electron-beam deposited SiO₂ served as an oxidation barrier while polyimide only hinders oxidation rate. Polyimide thickness ranges from 442–650 nm with varying spin rate and has an AlAs oxide thickness of 4.97–5.17 µm for a 25 minutes oxidation time. On the other hand, SiO₂ (annealed and unannealed) thickness ranges from 300–500 Å with varying deposition rate but still remains unoxidized.

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Issue

2005: Proceedings of the 23rd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2005-3B-03

Section

Materials Science

Published

2005-10-26

How to Cite

[1]

MJ Llena, A Garcia, A Somintac, and A Salvador, Oxidation barrier to vertical cavity surface-emitting laser (VCSEL) structures, Proceedings of the Samahang Pisika ng Pilipinas 23, SPP-2005-3B-03 (2005). URL: https://proceedings.spp-online.org/article/view/SPP-2005-3B-03.