Time-resolved photoluminescence of coupled GaAs/AlGaAs quantum wells
Abstract
Room temperature time resolved photoluminescence (PL) was performed on a coupled GaAs/AlGaAs asymmetric quantum wells (AQW). By applying reverse bias, the electronic states of the wide well (WW) and narrow well (NW) were brought into resonance. Spatially direct and indirect transitions were observed. The PL decay times at different applied reverse biases were determined from the streak images. An abrupt decrease in the decay time of the direct transition at –3V was attributed to resonant tunneling. At resonance, the PL decay time of the direct transition (3.2 ns) is less than that of the indirect transition (7.3 ns). This is an evidence of tunneling.
After resonance, the PL decay time of the direct transition decreased further to 2.5 ns. This is attributed to non-resonant tunneling via acoustic phonons.