Time resolved photoluminescence of oxide-confined vertical cavity surface emitting laser structure
Abstract
Room temperature time-resolved photoluminescence (TRPL) decay measurements have been performed on oxidized and unoxidized vertical cavity surface emitting lasers (VCSELs). The oxidized device showed faster photoluminescence (PL) decay time of 370 ps compared to the 1,200 ps of the unoxidized device. Oxidation of the AlAs layers brought a reduction of the aperture area, a blueshift in the cavity resonance wavelength relative to the unoxidized device, and the enhancement of the standing wave effect inside the microcavity resulting to the increase in the intensity of the optical field. These factors increase the transition probability of electron hole recombination resulting in the fast PL decay time.
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