Experimental analysis of charge carrier equilibration and distribution in silicon inside MOSFET using surface photovoltage spectroscopy (SPS)

Authors

Darwin B. Putungan Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños
Marvin U. Herrera Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños

Abstract

The charge carrier equilibration and distribution in silicon inside MOSFET was analyzed using surface photovoltage spectroscopy (SPS). Chemically treating the surface resulted to not well-defined states and transitions, and thus, keeping the samples under the dark after illumination with intense white light made the samples more responsive to illuminating light. Moreover, from the results obtained, the MOS structure of MOSFETs can be used as an alternative to the conventional Kelvin probe method in doing SPS analysis.

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Issue

2005: Proceedings of the 23rd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2005-1F-01

Section

Materials Science

Published

2005-10-26

How to Cite

[1]

DB Putungan and MU Herrera, Experimental analysis of charge carrier equilibration and distribution in silicon inside MOSFET using surface photovoltage spectroscopy (SPS), Proceedings of the Samahang Pisika ng Pilipinas 23, SPP-2005-1F-01 (2005). URL: https://proceedings.spp-online.org/article/view/SPP-2005-1F-01.