Time-response characteristics of a GaAs/AlGaAs modulation-doped Schottky photodetector
Abstract
The time response of a GaAs/AlGaAs modulationdoped schottky photodetector is studied using a mode-locked ~100-fs pulsed laser. The device was mounted on a needle probe assembly and the unbiased photocurrent is measured with a 20 GHz oscilloscope. The instrument-limited transient response is 34 ps. For an average incident power of 20 mW, the estimated quantum efficiency at 8400 Å is 0.0117 A/W.
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Published
2004-10-25
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Section
Plenary Sessions
How to Cite
[1]
“Time-response characteristics of a GaAs/AlGaAs modulation-doped Schottky photodetector”, Proc. SPP, vol. 22, no. 1, p. SPP-2004-PR-04, Oct. 2004, Accessed: Apr. 29, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2004-PR-04








