Time-response characteristics of a GaAs/AlGaAs modulation-doped Schottky photodetector
Abstract
The time response of a GaAs/AlGaAs modulationdoped schottky photodetector is studied using a mode-locked ~100-fs pulsed laser. The device was mounted on a needle probe assembly and the unbiased photocurrent is measured with a 20 GHz oscilloscope. The instrument-limited transient response is 34 ps. For an average incident power of 20 mW, the estimated quantum efficiency at 8400 Å is 0.0117 A/W.








