Time-response characteristics of a GaAs/AlGaAs modulation-doped Schottky photodetector

Authors

Elmer Estacio National Institute of Physics, University of the Philippines Diliman
Carlo Alonzo National Institute of Physics, University of the Philippines Diliman
Alipio Garcia National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

The time response of a GaAs/AlGaAs modulationdoped schottky photodetector is studied using a mode-locked ~100-fs pulsed laser. The device was mounted on a needle probe assembly and the unbiased photocurrent is measured with a 20 GHz oscilloscope. The instrument-limited transient response is 34 ps. For an average incident power of 20 mW, the estimated quantum efficiency at 8400 Å is 0.0117 A/W.

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Issue

2004: Proceedings of the 22nd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2004-PR-04

Section

Plenary Sessions

Published

2004-10-25

How to Cite

[1]

E Estacio, C Alonzo, A Garcia, A Somintac, and A Salvador, Time-response characteristics of a GaAs/AlGaAs modulation-doped Schottky photodetector, Proceedings of the Samahang Pisika ng Pilipinas 22, SPP-2004-PR-04 (2004). URL: https://proceedings.spp-online.org/article/view/SPP-2004-PR-04.