Time-response characteristics of a GaAs/AlGaAs modulation-doped Schottky photodetector

Authors

  • Elmer Estacio National Institute of Physics, University of the Philippines Diliman
  • Carlo Alonzo National Institute of Physics, University of the Philippines Diliman
  • Alipio Garcia National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

The time response of a GaAs/AlGaAs modulationdoped schottky photodetector is studied using a mode-locked ~100-fs pulsed laser. The device was mounted on a needle probe assembly and the unbiased photocurrent is measured with a 20 GHz oscilloscope. The instrument-limited transient response is 34 ps. For an average incident power of 20 mW, the estimated quantum efficiency at 8400 Ã… is 0.0117 A/W.

SPP 2004 Proceedings Cover

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Published

2004-10-25

Issue

2004: Proceedings of the 22nd Samahang Pisika ng Pilipinas Physics Congress

Section

Plenary Sessions

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All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.

How to Cite

[1]
“Time-response characteristics of a GaAs/AlGaAs modulation-doped Schottky photodetector”, Proc. SPP, vol. 22, no. 1, p. SPP-2004-PR-04, Oct. 2004, Accessed: Mar. 25, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2004-PR-04